Method for forming conductive epoxy flip-chip on chip

1. The method comprising the steps of: providing a first flip chip having at least one first die; connecting a second flip chip having at least one second die directly to the top of said first flip chip; and disposing electrically conductive epoxy means between said second flip chip and said top of said first flip chip to form an electrical connection between said first flip chip and said second flip chip and the respective first and second die.

2. The method comprising the steps of: providing a plurality of semiconductor chips each having at least one first die; vertically interconnecting said plurality of chips on top of one another to form an electrically interconnected stack of chips and the respective first die; connecting a flip chip having at least one second die directly to the top chip of said stack of chips; and disposing electrically conductive epoxy means between said flip chip and said top chip to form an electrical connection between said flip chip and said top chip and the respective second die and the first die on the top chip.

3. The method comprising the steps of: providing a semiconductor wafer having a plurality of first flip-chips formed thereon, each of said first flip chips each having at least one first die; providing a plurality of second flip chips each having at least one second die; connecting each one of said second flip chips directly to a respective one of said plurality of first flip-chips; and disposing electrically conductive epoxy means between the respective first flip-chip and second flip-chip connections to form an electrical connection between said respective first flip-chip and second flip chip connections and the respective first and second die.

4. The method comprising the steps of: providing a first flip-chip and a second flip-chip where said first flip-chip and said second flip-chip each include at least one first die and at least one second die, respectively, a plurality of terminals and a plurality of inner bond pads; covering said flip chip with a first insulation layer; exposing a first plurality of holes in said first insulation layer so as to expose said inner bond pads; disposing at least one metal layer over said first insulation layer in contact with said inner pads; disposing at least one second insulation layer over said metal layer; exposing a second plurality of holes in said second insulation layer so as to expose selected portions of said metal layer to form external connection points; and disposing electrically conductive epoxy means between said external connection points of said first flip-chip and said second flip-chip, thereby electrically connecting said first flip-chip and said second flip-chip and the respective first and second die.

5. The method as in claim 4, including the step of disposing said second flip chip face down on said first flip chip such that said external connection points are positioned directly above one another.

6. The method comprising the steps of: providing a first flip chip and a second flip chip where said first flip chip and said second flip chip each include at least one first die and at least one second die, respectively, a plurality of terminals and a plurality of inner bond pads; covering each flip chip with a first insulation layer, exposing a first plurality of holes in said first insulation layer so as to expose said inner bond pads, disposing a metal layer over said first insulation layer in contact with said inner bond pads, disposing a second insulation layer over said metal layer, exposing a second plurality of holes in said second insulation layer so as to expose selected portions of said metal layer to form external connection points, said external connection points being located internally on said flip-chip; disposing said second flip-chip face down on said first chip face-down such that said external connection points are positioned directly above said terminals on said first chip; and disposing electrically conductive epoxy between said external connection points of said first flip-chip and said second flip first chip, thereby electrically connecting said first flip chip to said second flip chip and the respective first and second die.

7. The method comprising the steps of: providing a first flip-chip and a second flip-chip where said first flip-chip and said second flip-chip each include at least one first die and at least one second die, respectively, a plurality of terminals and a plurality of inner bond pads; covering said flip chip with a first insulation layer; exposing a first plurality of holes in said first insulation layer so as to expose said inner bond pads; disposing a plurality of metal layers over said first insulation layer in contact with said inner pads; disposing a plurality of second insulation layers over a respective one of said metal layers; exposing a second plurality of holes in said second insulation layers so as to expose selected portions of said metal layers to form external connection points; and disposing electrically conductive epoxy means between said external connection points of said first flip-chip and said second flip-chip, thereby electrically connecting said first flip-chip and said second flip-chip and the respective first and second die.

8. The method comprising the steps of: providing a first flip chip having at least one first die; connecting a second flip chip having at least one second die directly to the top of said first flip chip; and disposing electrically conductive epoxy means between said second flip chip and said top of said first flip chip to form an electrical connection between said first flip chip and said second flip chip and the respective first and second die and to maintain a predetermined distance between said first flip chip and said second flip chip.

9. The method as in claim 8 wherein the predetermined distance is maintained by using glass spheres.

10. The method comprising the steps of: providing a plurality of semiconductor chips each having at least one first die; vertically interconnecting said plurality of chips on top of one another to form an electrically interconnected stack of chips and the respective first die; connecting a flip chip having at least one second die directly to the top chip of said stack of chips; and disposing electrically conductive epoxy means between said flip chip and said top chip to form an electrical connection between said flip chip and said top chip and to maintain a predetermined distance between said flip chip and said top flip chip and the second die and the respective first die.

11. The method as in claim 10 wherein the predetermined distance is maintained by using glass spheres.

12. The method comprising the steps of: providing a semiconductor wafer having a plurality of first flip-chips formed thereon, said first flip chips each having at least one first die; providing a plurality of second flip chips each having at least one second die; connecting each one of said second flip chips directly to a respective one of said plurality of first flip-chips; and disposing electrically conductive epoxy means between the respective first flip-chip and second flip-chip connections to form an electrical connection between said respective first flip-chip and second flip chip connections and said top chip and the respective first and second die and to maintain a predetermined distance between said first flip chip and said second flip chip.

13. The method as in claim 12 wherein the predetermined distance is maintained by using glass spheres.

14. The method comprising the steps of: providing a first group of flip chips each having at least one first die; connecting a respective one of a second group of flip chips each having at least one second die directly to the top of a respective one of said first group of flip chips; disposing electrically conductive epoxy means between the respective ones of said second group of flip chips and said first group of flip chips to form an electrical connection therebetween and the respective first and second die; and vertically interconnecting said first group of flip chips to a baseplate to form an electrically interconnected stack of chips.