Semiconductor device

1. A method of manufacturing a semiconductor device which has: a semiconductor chip having a main surface, and an integrated circuit and external terminals formed on said main surface; leads each having an inner lead and an outer lead which is continuous with said inner lead, each inner lead having a first portion which is disposed on said main surface; bonding wires electrically connecting the external terminals with the first portions of said the inner leads; and a resin member sealing said semiconductor chip, said inner leads and said bonding wires, said outer leads protruding outwardly from said resin member, the method comprising the steps of: (a) adhering said first portions of said inner leads to said main surface of said semiconductor chip by a first resin material; (b) electrically connecting said external terminals with said first portions of said leads by said bonding wires; and (c) after the steps (a) and (b), sealing said semiconductor chip, said inner leads, said first resin material and said bonding wires by a second resin material, thereby forming said resin member.

2. A method of manufacturing a semiconductor device according to claim 1, wherein said first resin material includes a thermoplastic resin, and wherein said second resin material includes a thermosetting resin.

3. A method of manufacturing a semiconductor device according to claim 2, wherein said thermosetting resin is a resin composite to which inorganic filler is added.

4. A method of manufacturing a semiconductor device according to claim 2, wherein said thermosetting resin is said resin composite with at least 70 wt. % of said inorganic filler.

5. A method of manufacturing a semiconductor device according to claim 4, wherein said inorganic filler is spherical particles having a particle size distribution of 0.1 to 100 microns, an average particle diameter of 5 to 20 microns, and a maximum packing density of at least 0.8.

6. A method of manufacturing a semiconductor device according to claim 1, wherein said first resin material includes a thermosetting resin, and wherein said second resin material includes a thermosetting resin which is a resin composite to which inorganic filler is added.

7. A method of manufacturing a semiconductor device according to claim 6, wherein said thermosetting resin of said second resin material is said resin composite with at least 70 wt. % of said inorganic filler.

8. A method of manufacturing a semiconductor device according to claim 7, wherein said inorganic filler is spherical particles having a particle size distribution of 0.1 to 100 microns, an average particle diameter of 5 to 20 microns, and a maximum packing density of at least 0.8.

9. A method of manufacturing a semiconductor device which has: a semiconductor chip having a main surface, and an integrated circuit and external terminals formed on said main surface; leads each having a first portion which is disposed on said main surface; bonding wires electrically connecting said external terminals with said first portions of said leads; and a resin member sealing said semiconductor chip, said first portions of said leads and said bonding wires, the method comprising the steps of: (a) adhering the first portions of said leads to said main surface of said semiconductor chip by a first resin material; (b) electrically connecting said external terminals with said first portions of said leads by said bonding wires; and (c) after the steps (a) and (b), sealing said semiconductor chip, said first portions of said leads, said first resin material and said bonding wires by a second resin material, thereby forming said resin member.