Method of forming photomask and pattern and method of forming a semiconductor device

1. A method of forming patterns using a photomask, comprising the steps of: preparing said photomask where both of interconnection pattern and a contact hole pattern are drawn to form an interconnection pattern and a contact hole pattern, a portion of said interconnection pattern and/or said contact hole pattern is covered with an absorption layer, exposing said interconnection pattern and said contact hole pattern to rays of two different wavelengths, wherein said absorption layer absorbs one of said rays.

2. A method of forming patterns according to claim 1, comprising the steps of: preparing said photomask where both of an interconnection pattern and a contact hole pattern are drawn; forming an interlayer insulating film on a semiconductor substrate; forming a first photoresist on said interlayer insulating film; radiating a first ray using said photomask to form a latent image of said contact hole pattern in said first photoresist; developing said first photoresist to form a resist pattern for a contact hole on said interlayer insulating film; etching said interlayer insulating film using said resist pattern for the contact hole to form in said interlayer insulating film a contact hole that exposes a surface of said semiconductor substrate; removing said resist pattern for the contact hole; forming a metal interconnection layer on said interlayer insulating film to be partially buried in said contact hole; forming a second photoresist on said semiconductor substrate to cover said metal interconnection layer; radiating a second ray using said photomask again to form a latent image of said interconnection pattern in said second photoresist; developing said second photoresist to form a resist pattern for the interconnection pattern on said interlayer insulating film; etching said metal interconnection layer using said resist pattern for the interconnection pattern to form a pattern of metal interconnection; and removing said resist pattern for the interconnection pattern.

3. The method of forming patterns according to claim 2, further comprising a step of providing an etching stopper layer having at a region where said contact hole is formed an opening portion larger than a diameter of said contact hole, on said interlayer insulating film, after forming said interlayer insulating film and prior to forming said first photoresist.

4. The method of forming patterns according to claim 2, wherein an absorption layer that absorbs said first ray is provided at said photomask to cover a portion where said interconnection pattern is drawn.

5. The method of forming patterns according to claim 2, wherein said first ray is KrF excimer laser beam and said second ray is i-line.

6. A method of forming patterns comprising the steps of: preparing a photomask where both of an interconnection pattern and a contact hole pattern are drawn, a portion where said interconnection pattern is drawn covered with an absorption layer that absorbs a first ray; forming successively an interlayer insulating film, an etching stopper layer, an oxide layer, and a negative first photoresist on a semiconductor substrate; radiating a second ray using said photomask to form a latent image of the interconnection pattern in said first photoresist; developing said first photoresist to form a resist pattern for the interconnection pattern on said oxide layer; etching said oxide layer using said resist pattern for the interconnection pattern as a mask to form an interconnection pattern formed of oxide; forming a positive second photoresist on said etching stopper layer to cover said interconnection pattern; radiating said first ray using said photomask again to form a latent image of the contact hole pattern in said second photoresist; developing said second photoresist to form a resist pattern for a contact hole on said etching stopper layer; etching said etching stopper layer and said interlayer insulating film using said resist pattern for the contact hole to form a contact hole in said interlayer insulating film; removing said resist pattern for the contact hole; and forming a metal interconnection layer on said semiconductor substrate to be partially buried in said contact hole; and etching back said metal interconnection layer until a surface of said oxide layer is exposed to form a pattern of metal interconnection.

7. The method of forming patterns according to claim 6, wherein said first ray is KrF excimer laser, and said second ray is i-line.

8. The method of forming a semiconductor device having an interconnection pattern and a contact hole pattern using a photomask comprising the steps of: preparing said photomask where both of an interconnection pattern and a contact hole pattern are drawn, a portion of said interconnection pattern is covered with an absorption layer that absorbs radiation from an excimer laser, but not i-line radiation; forming a silicon oxide film on said semiconductor substrate; forming on said silicon oxide film a silicon nitride pattern having an opening portion provided at the portion where a contact hole is formed, said opening portion being larger than the diameter of the contact hole; forming an excimer positive resist on said silicon oxide film to cover said silicon nitride pattern; radiating said excimer laser using said photomask to form a latent image of said contact hole pattern in said excimer positive resist; developing said excimer positive resist to form a resist pattern for the contact hole on said silicon oxide film; etching said silicon oxide film using said resist pattern for the contact hole to form in said silicon oxide film a contact hole that exposes a surface of said semiconductor substrate; removing said resist pattern for the contact hole and said silicon nitride pattern; forming a metal interconnection layer on said silicon oxide film to be partially buried in said contact hole; forming i-line positive resist on said semiconductor substrate to cover said metal interconnection layer; radiating i-line using said photomask again to form a latent image of said interconnection pattern in said i-line positive resist; developing said i-line positive resist to form a resist pattern for the interconnection pattern on said silicon oxide film; etching said metal interconnection layer using said resist pattern for the interconnection pattern to form a pattern of metal interconnection; and removing said resist pattern for the interconnection pattern.

9. The method of forming a semiconductor device having an interconnection pattern and a contact hole pattern using a photomask comprising the steps of: preparing a semiconductor substrate; preparing said photomask where both of an interconnection pattern and a contact hole pattern are drawn, a portion of said interconnection pattern is covered with an absorption layer that absorbs radiation from a first ray, but radiation from a second ray; forming an interlayer insulating film on said semiconductor substrate; forming a first photo resist on said interlayer insulating film; radiating said first ray using said photomask to form a latent image of said contact hole pattern in said first photo resist; developing said first photo resist to form a resist pattern for a contact hole on said interlayer insulating film; etching said interlayer insulating film using said resist pattern for the contact hole to form in said interlayer insulating film a contact hole that exposes a surface of said semiconductor substrate; removing said resist pattern for the contact hole; forming a metal interconnection layer on said interlayer insulating film to be partially buried in said contact hole; forming a second photo resist on said semiconductor substrate to cover said metal interconnection layer; radiating said second ray using said photomask again to form a latent image of said interconnection pattern in said second photo resist; developing said second photo resist to form a resist pattern for the interconnection pattern on said interlayer insulating film; etching said metal interconnection layer using said resist pattern for the interconnection pattern to form a pattern of metal interconnection; and removing said resist pattern for the interconnection pattern.

10. The method of forming a semiconductor device according to claim 9, further comprising a step of providing an etching stopper layer having a region where said contact hole is formed an opening portion larger than a diameter of said contact hole, on said interlayer insulating film, after forming said interlayer insulating film and prior to forming said first photo resist.

11. The method of forming a semiconductor device according to claim 9, wherein an absorption layer that absorbs said first ray is provided at said photomask to cover a portion where said interconnection pattern is drawn.

12. The method of forming a semiconductor device according to claim 9, wherein said first ray is KrF excimer laser beam and said second ray is i-line.

13. A method of forming a semiconductor device having an interconnection pattern and a contact hole pattern using a photomask comprising the steps of: preparing a semiconductor substrate; preparing said photomask where both of an interconnection pattern and a contact hole pattern are drawn, a portion where said interconnection pattern is drawn covered with an absorption layer that absorbs radiation from a first ray, but not radiation from a second ray; forming successively an interlayer insulating film, an etching stopper layer, an oxide layer, and a negative first photo resist on a semiconductor substrate; radiating said second ray using said photomask to form a latent image of the interconnection pattern in said first photo resist; developing said first photo resist to form a resist pattern for the interconnection pattern on said oxide layer; etching said oxide layer using said resist pattern for the interconnection pattern as a mask to form a interconnection pattern formed of oxide; forming a positive second photo resist on said etching stopper layer to cover said interconnection pattern; radiating said first ray using said photomask again to form a latent image of the contact hole pattern in said second photo resist; developing said photo resist to form a resist pattern for a contact hole on said etching stopper layer; etching said etching stopper layer and said interlayer insulating film using said resist pattern for the contact hole to form a contact hole in said interlayer insulating film, removing said resist pattern for the contact hole; and forming a metal interconnection layer on said semiconductor substrate to be partially buried in said contact hole; and etching back said metal interconnection layer until a surface of said oxide layer is exposed to form a pattern of metal interconnection.

14. The method of forming a semiconductor device according to claim 13, wherein said first layer is KrF excimer laser, and said second ray is i-line.