Method for making metal plug contacts and metal lines in an insulating layer by chemical/mechanical polishing that reduces polishing-induced damage

1. A method for making recessed patterned metal structures in an insulating layer by chemical/mechanical polishing comprising the steps of: providing a semiconductor substrate having semiconductor devices; forming a planar insulating layer composed of silicon oxide on said substrate; depositing an organic protective layer on said insulating layer; etching recesses in said organic protective layer and in said insulating layer; depositing a conformal barrier/adhesion layer on said organic protective layer and in said recesses; depositing a metal layer sufficiently thick to fill said recesses and to form an essentially planar surface; chemically/mechanically polishing back said metal layer and said barrier layer to said organic protective layer, wherein said organic protective layer protects said insulating layer from polishing-induced defects; removing selectively said organic protective layer to said insulating layer to complete said patterned metal structures, coplanar with top surface of said insulating layer.

2. The method of claim 1, wherein said insulating layer is deposited to a thickness of between about 50 and 2000 Angstroms.

3. The method of claim 1, wherein said insulating layer composed of silicon oxide is a fluorine-doped silicon glass (FSG) and having a thickness of between about 5000 and 10000 Angstroms.

4. The method of claim 1, wherein said organic protective layer is fluorine-doped polymer deposited by spin coating to a thickness of between about 500 and 1000 Angstroms.

5. The method of claim 1, wherein said barrier/adhesion layer is a multilayer of titanium and titanium nitride and is deposited to a total thickness of between about 200 and 1000 Angstroms.

6. The method of claim 1, wherein said recesses are contact openings for metal plugs and said metal layer is tungsten (W).

7. The method of claim 1, wherein said recesses are trenches for metal interconnections and said metal layer is aluminum/copper.

8. The method of claim 1, wherein said recesses are trenches for metal interconnections and said metal layer is copper.

9. The method of claim 1, wherein said chemical/mechanical polishing is carried out using a polishing slurry composed of aluminum oxide and hydrogen peroxide.

10. The method of claim 1, wherein said organic protective layer is removed selectively by plasma ashing in oxygen and wet cleaning in a solution of ACT-690, manufactured by Ashland Chemical, U.S.A.

11. A method for making recessed patterned metal interconnections in an insulating layer by chemical/mechanical polishing comprising the steps of: providing a semiconductor substrate having semiconductor devices; forming a planar insulating layer composed of silicon oxide on said substrate; depositing an organic protective layer on said insulating layer; etching recesses in said organic protective layer and in said insulating layer; depositing a conformal barrier/adhesion layer on said organic protective layer and in said recesses; depositing a metal layer sufficiently thick to fill said recesses and to form an essentially planar surface; chemically/mechanically polishing back said metal layer and said barrier layer to said organic protective layer, wherein said organic protective layer protects said insulating layer from polishing-induced defects; removing selectively said organic protective layer to said insulating layer to complete said patterned metal interconnections, coplanar with top surface of said insulating layer.

12. The method of claim 11, wherein said insulating layer is deposited to a thickness of between about 50 and 2000 Angstroms.

13. The method of claim 11, wherein said insulating layer composed of silicon oxide is a fluorine-doped silicon glass (FSG) and having a thickness of between about 5000 and 10000 Angstroms.

14. The method of claim 11, wherein said organic protective layer is fluorine-doped polymer deposited by spin coating to a thickness of between about 500 and 1000 Angstroms.

15. The method of claim 11, wherein said barrier/adhesion layer is a multilayer of titanium and titanium nitride and is deposited to a total thickness of between about 200 and 1000 Angstroms, and said metal layer is aluminum/copper.

16. The method of claim 11, wherein said barrier/adhesion layer is a multilayer of tantalum and tantalum nitride and is deposited to a total thickness of between about 200 and 600 Angstroms, and said metal layer is copper.

17. The method of claim 11, wherein said chemical/mechanical polishing is carried out using a polishing slurry composed of aluminum oxide and hydrogen peroxide.

18. The method of claim 11, wherein said organic protective layer is removed selectively by plasma ashing in oxygen and wet cleaning in a solution of ACT-690 manufactured by Ashland Chemical of U.S.A.

19. A method for making metal plugs in an insulating layer by chemical/mechanical polishing comprising the steps of: providing a semiconductor substrate having a patterned conducting layer on its surface; forming a planar insulating layer composed of silicon oxide on said patterned conducting layer; depositing an organic protective layer on said insulating layer; etching openings for said metal plugs in said organic protective layer and in said insulating layer to said conducting layer; depositing a conformal barrier/adhesion layer on said organic protective layer and in said openings; depositing a metal layer sufficiently thick to fill said openings and to form an essentially planar surface; chemically/mechanically polishing back said metal layer and said barrier layer to said organic protective layer, wherein said organic protective layer protects said insulating layer from polishing-induced defects; removing selectively said organic protective layer to said insulating layer to complete said metal plugs in said openings, said metal plugs coplanar with said insulating layer.

20. The method of claim 19, wherein said patterned conducting layer is a metal layer having a thickness of between about 3000 and 12000 Angstroms.

21. The method of claim 19, wherein said patterned conducting layer is a polycide composed of a doped polysilicon layer with a refractory metal silicide layer on its surface, and having a total thickness of between about 1000 and 3000 Angstroms.

22. The method of claim 19, wherein said insulating layer is deposited to a thickness of between about 50 and 2000 Angstroms.

23. The method of claim 19, wherein said insulating layer composed of silicon oxide is a fluorine-doped silicon glass (FSG) and having a thickness of between about 5000 and 10000 Angstroms.

24. The method of claim 19, wherein said organic protective layer is fluorine-doped polymer deposited by spin coating to a thickness of between about 500 and 1000 Angstroms.

25. The method of claim 19, wherein said barrier/adhesion layer is a multilayer of titanium and titanium nitride and is deposited to a total thickness of between about 200 and 1000 Angstroms.

26. The method of claim 19, wherein said metal layer is tungsten (W).

27. The method of claim 19, wherein said chemical/mechanical polishing is carried out using a polishing slurry composed of aluminum oxide and hydrogen peroxide.

28. The method of claim 19, wherein said organic protective layer is removed selectively by plasma ashing in oxygen and wet cleaning in a solution of ACT-690 manufactured by Ashland Chemical of U.S.A.