Method of manufacturing multiple aluminum layer in a semiconductor device

1. A production method of a semiconductor device for filling in a wiring connection hole by sputtering deposition of aluminum or an alloy mainly comprising aluminum characterized by a process for first depositing aluminum or an alloy mainly comprising aluminum at a temperature of below 300.degree. C. (low-temperature sputtering), followed by a process for depositing aluminum or an alloy mainly comprising aluminum at or above 300.degree. C. (high-temperature sputtering), wherein a thickness A of the film of aluminum or an alloy mainly comprising aluminum deposited at a temperature of below 300.degree. C. and a thickness B of the film of aluminum or an alloy mainly comprising aluminum deposited at or above 300.degree. C. are in a relation of A>B, and a deposition rate of aluminum or an alloy mainly comprising aluminum deposited at or above 300.degree. C. is a rate which does not deteriorate the shape of a registration position measurement mark.

2. The production method of a semiconductor device as claimed in claim 1, wherein said deposition rate of aluminum or an aluminum alloy mainly comprising aluminum deposited at or above 300.degree. C. is 200 nm/min or less.

3. The production method of a semiconductor device as claimed in claim 2, wherein said deposition rate is 40 nm/min to 100 nm/min.

4. The production method of a semiconductor device as claimed in claim 1, wherein said low-temperature sputtering is carried out at room temperature to 100.degree. C.

5. The production method of a semiconductor device as claimed in claim 1, wherein said high-temperature sputtering is carried out at a temperature of 300.degree. C. to 500.degree. C.

6. The production method of a semiconductor device as claimed in claim 5, wherein said high-temperature sputtering is carried out at a temperature of 350.degree. C. to 400.degree. C.

7. The production method of a semiconductor device as claimed in claim 1, wherein said aluminum material is aluminum.

8. The production method of a semiconductor device as claimed in claim 1, wherein said aluminum material is an aluminum alloy.

9. The production method of a semiconductor device as claimed in claim 8, wherein said aluminum alloy is aluminum--1.0 weight % silicon--0.5 weight % copper.

10. The production method of a semiconductor device as claimed in claim 1, wherein said aluminum or aluminum alloy is deposited as a layer and is formed after forming an underlayer.

11. The production method of a semiconductor device as claimed in claim 10, wherein said underlayer is selected from the group consisting of a titanium film, a titanium nitride film, a titanium-tungsten alloy film, and a tungsten nitride film.

12. The production method of a semiconductor device as claimed in claim 10, wherein said underlayer comprises a laminate of titanium film, titanium nitride film and titanium film.

13. The production method of a semiconductor device as claimed in claim 1, wherein part of said wiring connection hole is buried with tungsten.