Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a mesas at semiconductor surface, comprising the steps of: implanting dopant ions into a surface of a semiconductor wafer; and then removing selected portions of said surface to leave a mesa at said surface, said mesa having a uniformly-doped region at an upper surface.
2. The method of claim 1 wherein said implanting step comprises implanting said surface with ions of a material selected from the group consisting of boron, phosphorous, arsenic, antimony, and indium.
3. The method of claim 1 wherein said removing step comprises etching trenches into said surface of said semiconductor wafer.
4. The method of claim 3 wherein said etching step etches the surface to a depth beyond a range of the implanting step, so that substantially none of the implanted dopant ions are present at upper surfaces of said trenches.
Complete technical specification and implementation details from the patent document.
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Unknown
January 9, 2001
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