Patentable/Patents/US-6173673
US-6173673

Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber

PublishedJanuary 16, 2001
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

Patent Claims
19 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. A processing system for processing a substrate with a plasma, the processing system comprising: a processing chamber defining a process space, the processing chamber including a support structure for supporting a substrate within the process space; a gas inlet in the chamber for introducing a process gas into the chamber; a showerhead positioned within the chamber and operable for dispersing process gas from the inlet into the process space; a supply of electrical energy for biasing the showerhead to form a plasma with process gas dispersed by the showerhead; an insulator assembly contacting the showerhead and positioned between the showerhead and the processing chamber, the insulator assembly operable to electrically insulate the showerhead from the processing chamber; the insulator assembly including a passage therethrough for passing a process gas from the gas inlet through the insulator assembly, the passage including sections thereof which are laterally spaced from each other; the passage further including a cross passage section extending between the laterally spaced passage sections to couple the laterally spaced passage sections together and form a passage through the insulator assembly for passing a process gas to the showerhead; whereby a direct line-of-sight passage through the insulator assembly is avoided to maintain the stability of the plasma during processing.

2

2. The processing system of claim 1 wherein the insulator assembly includes first and second electrical insulator elements, each element including a passage section extending therethrough for passing a gas through the insulator element, the respective passage sections of the insulator elements being laterally spaced from each other, the cross passage section being formed in at least one of the elements and extending between the spaced passage sections to couple the passage sections together and form the complete passage.

3

3. The processing system of claim 2 wherein the cross passage section is formed completely in one element.

4

4. The processing system of claim 1 wherein said insulator assembly is formed of quartz.

5

5. The processing system of claim 1 wherein said supply of electrical energy is an RF power supply for biasing the showerhead with RF energy.

6

6. The processing system of claim 2 wherein said insulator elements are planar insulator plates which are stacked one on the other.

7

7. The processing system of claim 6 further comprising alignment pins positioned between the insulator plates for providing proper alignment between the respective passage sections and the cross passage section to form said passage.

8

8. The processing system of claim 1 wherein said passage forms at least one 90 degree angle between the showerhead and the chamber for the flow of a process gas.

9

9. The processing system of claim 1 wherein the insulator assembly further comprises multiple passages therethrough, each of the passages including a pair of laterally spaced passage sections with a cross passage section coupling the spaced passage sections together.

10

10. The processing system of claim 9 wherein the multiple passages are physically isolated from each other.

11

11. The processing system of claim 1 wherein said cross passage section is semi-circular in shape.

12

12. The processing system of claim 6 wherein said insulator plates each form a plane and said laterally spaced passage sections are oriented generally perpendicular to said plate planes, the cross passage section being oriented generally parallel to said plane of the plate in which it is formed.

13

13. A processing system for processing a substrate with a plasma, the processing system comprising: a processing chamber defining a process space, the processing chamber including a support structure for supporting a substrate within the process space; a gas inlet in the chamber for introducing a process gas into the chamber; a showerhead positioned within the chamber and operable for dispersing process gas from the inlet into the process space; a supply of electrical energy for biasing the showerhead to form a plasma with process gas dispersed by the showerhead; an insulator assembly positioned between the showerhead and the processing chamber, the insulator assembly contacting the showerhead and operable to electrically insulate the showerhead from the processing chamber and comprising a plurality of electrical insulator elements positioned adjacent to each other between the showerhead and the processing chamber; each of said plurality of insulator elements having a passage section therethrough for passing a process gas from the gas inlet through the insulator element, the respective passages of the adjacent insulator elements being laterally spaced from each other; at least one cross passage section extending between the laterally spaced passage sections of adjacent insulator elements to couple the laterally spaced passages together for passing a process gas through the adjacent insulator elements; whereby a direct line-of-sight passage through the insulator assembly is avoided to maintain the stability of the plasma during processing.

14

14. An electrically insulative assembly for insulating a biased gas-dispersing element from a ground reference within a processing system for processing a substrate with a plasma, the insulative assembly comprising: a processing chamber defining a process space, the processing chamber including a support structure for supporting a substrate within the process space; an electrical insulator assembly configured to be positioned between a biased gas-dispersing element and a ground reference to electrically insulate the gas-dispersing element; the insulator assembly configured for contacting the gas-dispersing element and including a passage therethrough for passing a process gas from the gas inlet through the insulator assembly, the passage including sections thereof which are laterally spaced from each other; the passage further including a cross passage section extending between the laterally spaced passages to couple the laterally space passage sections together and form a complete passage through the insulator assembly for passing a process gas to a gas-dispersing element; whereby a direct line-of-sight passage through the insulator assembly is avoided to maintain the stability of the plasma during processing.

15

15. The assembly of claim 14 wherein the insulator assembly includes first and second electrical insulator elements, each element including a passage section extending therethrough for passing a gas through the insulator element, the respective passage sections of the insulator elements being laterally spaced from each other, the cross passage section being formed in at least one of the elements and extending between the spaced passage sections to couple the passage sections together and form the complete passage.

16

16. The assembly of claim 14 wherein said insulator assembly is formed of quartz.

17

17. The assembly of claim 14 wherein said insulator elements are planar inslulator plates which are stacked one on the other.

18

18. The assembly of claim 14 wherein said passage forms at least one 90 degree angle for the flow of a process gas through the insulator assembly.

19

19. The assembly of claim 14 wherein the insulator assembly further comprises multiple passages therethrough, each of the passages including a pair of laterally spaced passage sections with a cross passage section coupling the spaced passage sections together.

Detailed Description

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DETAILED DESCRIPTION

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Patent Metadata

Filing Date

Unknown

Publication Date

January 16, 2001

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