High frequency valid data strobe

1. A semiconductor circuit comprising: a plurality of transmission line elements; an input line for receiving an input pulse; a transmission line stub element for selecting a predetermined transmission time delay increment by reflecting the input pulse through the transmission line elements to create a reflection pulse; and an output pulse generator having a sensing circuit for sensing the input pulse and the reflected pulse and generating an output pulse having a pulse width that is a fixed interval.

2. The semiconductor circuit of claim 1 wherein the transmission line stub is incrementally variable to provide a variable time delay.

3. A semiconductor circuit comprising: at least one data storage memory having a control input terminal and a data input terminal; a data processor including a send/receive control bus circuit connected via a control bus line to the memory control input terminal of the at least one memory for sending and receiving control signals to and from the at least one memory, and a data line connected to the at least one memory data input terminal for transmitting data signals to and from the at least one memory; a transmission line stub connected to the at least one control bus line at the memory control input terminal for providing a time delay to synchronize the control signals with the data signal; wherein the send/receive control bus circuit includes a drive circuit responsive to a clock signal input to produce control signal pulses, and a detector circuit connected to the driver circuit and to the control bus line, the detector circuit being enabled by the driver circuit to receive pulses from the memory on the control bus line that are time delayed by the transmission line stub and are synchronized with the data signals on the data line.

4. The semiconductor circuit of claim 3 wherein the impedance of the transmission line stub is Z0 and the send/receive control bus circuit has an impedance of Z0.

5. The semiconductor memory of claim 3 wherein the transmission line stub is incrementally variable to provide a variable time delay and wherein the time delay between data processor and the memory is Tb, the transmission delay line stub has a time delay of Ts, and wherein the pulses received on by the detector circuit on the control bus line from the memory are at time 2 tb+2 Ts and are in synchronism with the data signal pules from the memory on the data line.

6. The semiconductor circuit of claim 3 wherein the semiconductor circuit comprises a plurality of k data storage memories, each connected to the data processor by a control bus line and a data line.