Method for preventing crosstalk between conductive layers

1. A method for preventing horizontal crosstalk between conductive layers on a semiconductor device, comprising the steps of: providing a substrate having at least a first dielectric layer formed thereon; forming a plurality of conductive lines on the first dielectric layer; removing a portion of the exposed first dielectric layer to form a recess thereon to expose the first dielectric layer underlying the conductive lines; forming an insulation layer on the substrate; and forming a dummy conductive layer on the insulation layer, a portion of the dummy conductive layer being located between the conductive lines; forming a second dielectric layer over the substrate; and forming a patterned conductive layer on the second dielectric layer.

2. The method of claim 1, wherein the dummy conductive layer includes a metallic layer.

3. The method of claim 1, wherein the conductive lines include a defined metallic layer.

4. The method of claim 1, wherein the removing a portion of the first exposed dielectric layer step includes over-etching the dielectric layer.

5. A method for preventing vertical crosstalk between conductive layers, comprising the steps of: forming a first dielectric layer on a substrate having at least a first conductive layer; forming a dummy conductive layer on the first dielectric layer; forming a second dielectric layer on the dummy conductive layer; forming a via hole through the second dielectric layer, the dummy conductive layer and the first dielectric layer to expose the first conductive layer; forming an insulation layer around the via hole; forming a via plug in the via hole; and forming a second conductive layer on the second dielectric layer, wherein the second conductive layer connects with the first conductive layer by the via plug and is shielded from the first conductive layer by the dummy conductive layer.

6. The method of claim 5, wherein the first and the second conductive layers include a metallic layer.

7. The method of claim 5, wherein the dummy conductive layer includes a metallic layer.

8. A method for preventing vertical crosstalk between conductive layers, comprising the steps of: forming a first dielectric layer on a substrate having at least a first conductive layer; forming a dummy conductive layer on the first dielectric layer; forming a second dielectric layer on the dummy conductive layer; forming a via hole through the second dielectric layer, the dummy conductive layer and the first dielectric layer to expose the first conductive layer; forming a spacer around the via hole; forming a via plug in the via hole; and forming a second conductive layer on the second dielectric layer, wherein the second conductive layer connects with the first conductive layer by the via plug.