Silicon nitride etch bath system

1. A method for extracting silicon dioxide from a silicon-nitride etching bath comprising the steps of: providing an etching bath containing phosphoric acid; depositing semiconductor wafers with silicon-nitride films in said etching bath; circulating the phosphoric acid from the etching bath; filtering the phosphoric acid; controlling temperature of the phosphoric acid before returning the same to the etching bath; cooling a small portion of the phosphoric acid from the etching bath; and extracting silicon dioxide particles in the small portion of the phosphoric acid before returning the same to the etching bath.

2. A silicon nitride etch bath system comprising in combination: an etching bath containing phosphoric acid; semiconductor wafers with silicon-nitride films being deposited in said etching bath; a pump for circulating said phosphoric acid from said etching bath to its outlet; a primary filter operatively connected to said pump outlet for filtering said phosphoric acid; a heater operatively connected to said primary filter to control temperature of said phosphoric acid before returning the same to said etching bath; heat exchanger means operatively connected also to said pump outlet for removing a small portion of said phosphoric from said etching bath and for cooling of the same; and means operatively connected to said heat exchanger means for extracting silicon dioxide particles in the small portion of said phosphoric acid before returning the same to said etching bath; whereby the concentration of silicon dioxide in said etching bath will be prevented from being saturated.

3. A silicon nitride etch bath system as claimed in claim 1, wherein said heat exchanger means includes a cooling coil.

4. A silicon nitride etch bath system as claimed in claim 2, wherein said means for extracting silicon dioxide particles is comprised of a secondary filter.

5. A silicon nitride etch bath system as claimed in claim 2, wherein said means for removing silicon dioxide particles is comprised of a settling tank.

6. A silicon nitride etch bath system as claimed in claim 1, wherein the temperature of said etching bath is maintained at approximately 150.degree. C. so that the maximum concentration of silicon is approximately 100 ppm.

7. A silicon nitride etch bath system as claimed in claim 5, wherein said heat exchanger means is used to reduce the temperature of the small portion of phosphoric acid to about 50.degree. C. so that the concentration of silicon dioxide is approximately 20 ppm.