Top heatsink for IGBT

1. An IGBT for a motor control circuit which can drive a motor in a range of speed including very low speeds requiring the IGBT to carry at least a portion of the motor output current which has a frequency of about 3 Hz and greater; said IGBT comprising a silicon die having IGBT junctions formed in its top surface to define emitter and gate regions and having a collector electrode on its opposite surface; said collector electrode being at least thermally coupled to a support surface; and a heat slug having a thermal conductivity substantially greater than a thermal conductivity of said die; said heat slug being thermally coupled to said emitter region of said die for absorbing and storing heat from said die during peak temperature conditions of said die, and returning heat to said die during reduced die temperature conditions, thereby to reduce a ratio comprising a peak temperature of the die junctions to an average temperature of the die junctions, substantially without reducing DC thermal resistance, said heat slug standing alone and not contacting any metallic part of said IGBT other than said emitter region.

2. The structure of claim 1, wherein said heat slug is made of copper.

3. The structure of claim 2, wherein said heat slug is thicker than about 0.08 inch and has an area which is substantially coextensive with the area of said die.

4. The structure of claim 1, wherein said ratio is less than about 2.1.

5. The structure of claim 2, where said ratio is less than about 2.1.

6. The structure of claim 3, where said ratio is less than about 2.1.

7. An IGBT comprising a die having IGBT junctions formed in its top surface to define emitter and gate regions and having a collector electrode on its opposite surface; and a heat slug having a thermal conductivity substantially greater than a thermal conductivity of said die; said heat slug being thermally coupled to said emitter region of said die for absorbing heat from said die during peak temperature conditions of said die, and returning heat to said die during reduced die temperature conditions, thereby to reduce a ratio comprising a peak temperature of the die junctions to an average temperature of the die junctions, substantially without reducing DC thermal resistance, said heat slug standing alone and not contacting any metallic part of said IGBT other than said emitter region.

8. The structure of claim 7, wherein said heat slug is made of copper.

9. The structure of claim 8, wherein said heat slug is thicker than about 0.08 inch and has an area which is substantially coextensive with the area of said die.

10. The structure of claim 7, wherein said ratio is less than about 2.1.

11. The structure of claim 8, wherein said ratio is less than about 2.1.

12. The structure of claim 9, wherein said ratio is less than about 2.1.

13. A semiconductor device comprising a silicon die having first and second parallel spaced surfaces and being p-n junctions formed into said first surface and having conductive electrodes on said first and second surfaces; and a heat slug of thermal conductivity which is greater than that of said die; said heat slug defining a thermal heatsink mass and being thermally coupled to said first surface for absorbing and storing heat from said die during peak temperature conditions of said die, and returning heat to said die during reduced die temperature conditions, thereby to reduce a ratio comprising a peak temperature of the die junctions to an average temperature of the die junctions, substantially without reducing DC thermal resistance, said heat slug standing alone and not contacting any metallic part of said IGBT other than said emitter region.

14. The semiconductor device of claim 13 wherein said p-n junctions define a device selected from the group consisting of IGBTs, diodes, MOSFETs and thyristors.

15. The structure of claim 13, wherein said heat slug is made of copper.

16. The structure of claim 15, wherein said heat slug is thicker than about 0.08 inch and has an area which is substantially coextensive with the area of said die.

17. The structure of claim 15, wherein said ratio is less than about 2.1.

18. The structure of claim 16, wherein said ratio is less than about 2.1.