A TSOP type semiconductor device having a LOC structure employing a copper (alloy) type frame prevents resin cracks that occur in a reliability test such as a temperature cycle test. The TSOP type semiconductor device has narrower common inner leads where a resin crack would be likely to occur first, and has a thinner chip.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: a column of electrodes formed on said main surface of said semiconductor element; a first lead having a region extending in one direction on the main surface of the semiconductor element, said region having a length greater than a length of the column of electrodes; a plurality of second leads disposed in directions crossing the region; an insulating film provided between the first and second leads and the semiconductor element; and resin for sealing the main surface of the semiconductor element; wherein the first lead is formed of a copper-based constituent, and the first lead has a portion of a smaller lead width, the portion of the smaller lead width extending through the entire length of said region.
2. A semiconductor device according to claim 1, wherein the column of electrodes extends in said first direction such that said region of said first lead and said column of electrodes are substantially parallel to one another.
3. A semiconductor device according to claim 2, wherein a maximum width of the first lead in said portion having a smaller lead width is 0.2 mm or less.
4. A semiconductor device according to claim 1, wherein a maximum width of the first lead in said portion having a smaller lead width is 0.2 mm or less.
5. A semiconductor device according to claim 1, wherein the first lead is a common power supply lead.
6. A semiconductor device comprising: a semiconductor element having a main surface; a column of electrodes formed on said main surface of said semiconductor element; a first lead having a region extending in one direction on the main surface of the semiconductor element, said region having a length greater than a length of the column of electrodes; a plurality of second leads disposed in directions crossing the region; an insulating film provided between the first and second leads and the semiconductor element; and resin for sealing the main surface of the semiconductor element; wherein the first lead is formed of a copper-based constituent, and the first lead has a portion of a smaller lead thickness, the portion of the smaller lead thickness extending through the entire length of said region.
7. A semiconductor device according to claim 6, wherein the column of electrodes extends in said first direction such that said region of said first lead and said column of electrodes are substantially parallel to one another.
8. A semiconductor device according to claim 7, wherein a maximum thickness of the first lead in said portion having a smaller lead thickness is 0.07 mm or less.
9. A semiconductor device according to claim 6, wherein a maximum thickness of the first lead in said portion having a smaller lead thickness is 0.07 mm or less.
10. A semiconductor device according to claim 6, wherein the first lead is a common power supply lead.
11. A semiconductor device comprising: a semiconductor element having a main surface; a column of electrodes formed on said main surface of said semiconductor element; a first lead having a region extending in one direction on the main surface of the semiconductor element, said region having a length greater than a length of the column of electrodes; a plurality of second leads disposed in directions crossing the region; an insulating film provided between the first and second leads and the semiconductor element; and resin for sealing the main surface of the semiconductor element; wherein the first lead is formed of a copper-based constituent, and a surface of the region of the first lead is provided with a groove extending through the entire length of said region, the surface of the first lead being associated with the semiconductor element.
12. A semiconductor device according to claim 11, wherein the column of electrodes extends in said first direction such that said region of said first lead and said column of electrodes are substantially parallel to one another.
13. A semiconductor device according to claim 11, wherein the first lead is a common power supply lead.
14. A semiconductor device comprising: a semiconductor element having a main surface; a column of electrodes formed on said main surface of said semiconductor element; a first lead having a region extending in one direction on the main surface of the semiconductor element, said region having a length greater than a length of the column of electrodes; a plurality of second leads disposed in directions crossing the region; an insulating film provided between the first and second leads and the semiconductor element; and wherein the first lead is formed of a copper-based constituent, and the region of the first lead is provided with a slit extending through the entire length of said region.
15. A semiconductor device according to claim 14, wherein the column of electrodes extends in said first direction such that said region of said first lead and said column of electrodes are substantially parallel to one another.
16. A semiconductor device according to claim 14, wherein the first lead is a common power supply lead.
17. A semiconductor device comprising: a semiconductor element having a main surface; a column of electrodes formed on said main surface of said semiconductor element; a first lead having a region extending in one direction on the main surface of the semiconductor element, said region having a length greater than a length of the column of electrodes; a plurality of second leads disposed in directions crossing the region; an insulating film provided between the first and second leads and the semiconductor element; and resin for sealing the main surface of the semiconductor element; wherein the first lead is formed of a copper-based constituent, and the first lead other than the region is taken out from a point located at a portion of the region closer to a center of the semiconductor element than an end of the region of the first lead.
18. A semiconductor device according to claim 17, wherein said first lead has a portion of a smaller lead width, the portion of the smaller lead width extending through the entire length of said region.
19. A semiconductor device according to claim 18, wherein the column of electrodes extends in said first direction such that said region of said first lead and said column of electrodes are substantially parallel to one another.
20. A semiconductor device according to claim 17, wherein the first lead is a common power supply lead.
21. A semiconductor device comprising: a semiconductor element having a main surface; a column of electrodes formed on said main surface of said semiconductor element; a first lead having a region extending in one direction in the main surface of the semiconductor element, said region having a length greater than a length of the column of electrodes; a plurality of second leads disposed in directions crossing the region; an insulating film provided between the first and second leads and the semiconductor element; and resin for sealing the main surface of the semiconductor element; wherein the first lead is formed of a copper-based constituent; a design value of the thickness of the sealing resin on the first lead side of the semiconductor element is 0.37 (mm); and a relationship between a width W (mm) of the first lead in the region and a thickness t (mm) of the first lead in the region is expressed by W.ltoreq.-1.95t+0.44.
22. A semiconductor device according to claim 21, wherein the column of electrodes extends in said first direction such that said region of said first lead and said column of electrodes are substantially parallel to one another.
23. A semiconductor device according to claim 21, wherein the first lead is a common power supply lead.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 17, 1999
May 15, 2001
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