A ferroelectric capacitor electrode contact structure comprising an insulator (4) placed over a substrate (2) and containing a transistor source (6) and transistor drain (8) between the substrate (2) and the insulator (4). The insulator (4) contains a source plug (10) and a conductive drain plug (12). The transistor source (6) is electrically connected to the source plug (10). The transistor drain (8) is electrically connected to the conductive drain plug (12). A transistor gate (14) is between the source plug (10) and a conductive drain plug (12) and is contained by the insulator (4). Metal wiring (16) is electrically connected to the source plug (10). A barrier film (18) is placed over the insulator (4) and the conductive drain plug (12). The bottom electrode (20) is placed over the barrier film (18). The ferroelectric layer (22) is placed over the bottom electrode (20). The top electrode (24) is placed over the ferroelectric layer (22).
Legal claims defining the scope of protection, as filed with the USPTO.
1. A process for fabrication of a ferroelectric capacitor, comprising the steps of: depositing a barrier film over a conductive plug; forming a bottom electrode over said barrier in a vacuum at a temperature between 350 and 700 C, said temperature changing as said bottom electrode is being deposited and is adjusted to room temperature for the final about 10 nm of deposition; depositing a ferroelectric capacitor dielectric over said bottom electrode; and depositing a top electrode over said ferroelectric capacitor dielectric.
2. A process for fabrication of a bottom electrode for a ferroelectric capacitor, comprising the steps of: depositing a barrier film over a conductive plug; forming a bottom electrode over said barrier wherein said forming is by depositing and the deposition of said bottom electrode starts at about 500 C and then is adjusted to room temperature for the final about 10 nm of deposition.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 14, 1999
May 29, 2001
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