The present invention provides for a method and an apparatus for controlling critical dimensions. At least one run of semiconductor devices is processed. A critical dimension measurement is performed upon at least one of the processed semiconductor device. An analysis of the critical dimension measurement is performed. A secondary process upon the semiconductor device in response to the critical dimension analysis is performed.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for controlling critical dimensions, comprising: processing at least one run of semiconductor devices; performing a critical dimension measurement upon at least one of said processed semiconductor device; performing an analysis of said critical dimension measurement; and performing a secondary process upon said semiconductor device in response to said critical dimension analysis.
2. The method described in claim 1, wherein performing a process run of semiconductor devices further comprises processing semiconductor wafers.
3. The method described in claim 1, wherein performing a critical dimension measurement further comprises performing critical dimension measurements on a polysilicon gate.
4. The method described in claim 3, wherein performing a critical dimension measurement further comprises measuring a width of a polysilicon line.
5. The method described in claim 1, wherein performing a secondary process upon said semiconductor device further comprises performing a secondary etch process.
6. The method described in claim 5, wherein performing a secondary etch process further comprises: determining an amount of critical dimension adjustments to be made on said semiconductor device; modifying at least one control input signal for controlling said secondary etch process; using a mask for preventing etching on the surface of said semiconductor device; and performing an isotropic etching process on said semiconductor device.
7. The method described in claim 6, wherein modifying at least one control input signal further comprises modifying a signal that controls a flow rate of a process gas.
8. The method described in claim 6, wherein modifying at least one control input signal further comprises modifying a signal that controls an etch time period.
9. The method described in claim 6, wherein modifying at least one control input signal further comprises modifying a signal that controls a power level of an etch process.
10. The method described in claim 6, wherein modifying at least one control input signal further comprises modifying a signal that controls a pressure level of an etch process.
11. The method described in claim 6, wherein modifying at least one control input signal further comprises modifying a signal that controls a temperature setting during an etch process.
12. An apparatus for controlling critical dimensions, comprising: a photolithography process tool capable of performing photolithography processes on a semiconductor device; a photolithography metrology tool coupled with said photolithography process tool, said photolithography metrology tool being capable of acquiring photolithography metrology data; a standard etch-processing tool capable of receiving said semiconductor device from said photolithography metrology tool; a standard etch-processing metrology tool coupled with said standard etch-processing process tool, said standard etch-processing metrology being capable of acquiring standard etch-processing metrology data; a secondary etch-processing tool capable of receiving said semiconductor device from said standard etch-processing metrology tool; a secondary etch-processing metrology tool coupled with said secondary etch-processing tool, said secondary etch-processing metrology tool metrology being capable of acquiring secondary etch-processing metrology data; a control algorithm capable of receiving at least one of photolithography metrology data, standard etch-processing metrology data, and secondary etch-processing metrology data, said control algorithm being capable of controlling at least one of said photolithography metrology tool, said standard etch-processing tool, and said secondary etch-processing tool.
13. The apparatus of claim 12, wherein said control algorithm is integrated into a process control system.
14. The apparatus of claim 13, wherein said process control system is an Advanced Process Control framework.
15. An apparatus for controlling critical dimensions, comprising: means for processing at least one run of semiconductor devices; means for performing a critical dimension measurement upon at least one of said processed semiconductor device; means for performing an analysis of said critical dimension measurement; and means for performing a secondary process upon said semiconductor device in response to said critical dimension analysis.
16. A computer readable program storage device encoded with instructions that, when executed by a computer, performs a method for controlling critical dimensions, comprising: processing at least one run of semiconductor devices; performing a critical dimension measurement upon at least one of said processed semiconductor device; performing an analysis of said critical dimension measurement; and performing a secondary process upon said semiconductor device in response to said critical dimension analysis.
17. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 16, wherein performing a process run of semiconductor devices further comprises processing semiconductor wafers.
18. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 16, wherein performing critical dimension measurements further comprises performing a critical dimension measurement on a polysilicon gate.
19. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 18, wherein performing a critical dimension measurement further comprises measuring a width of a polysilicon line.
20. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 16, wherein performing a secondary process upon said semiconductor device further comprises performing a secondary etch process.
21. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 20, wherein performing a secondary etch process further comprises: determining an amount of critical dimension adjustments to be made on said semiconductor device; modifying at least one control input signal for controlling said secondary etch process; using a hard mask for preventing etching on the surface of said semiconductor device; and performing an isotropic etching process on said semiconductor device.
22. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 21, wherein modifying at least one control input signal further comprises modifying a signal that controls a flow rate of a process gas.
23. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 21, wherein modifying at least one control input signal further comprises modifying a signal that controls an etch time period.
24. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 21, wherein modifying at least one control input signal further comprises modifying a signal that controls a power level of an etch process.
25. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 21, wherein modifying at least one control input signal further comprises modifying a signal that controls a pressure level of an etch process.
26. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 21, wherein modifying at least one control input signal further comprises modifying a signal that controls a temperature setting during an etch process.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 19, 2000
June 12, 2001
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