Method and device for producing electrically conductive continuity in semiconductor components

1. A thermo-migration process for producing electrically conductive passages in a disc-form semi-conductor having a first outer surface and a second outer surface opposed to the first outer surface wherein the first outer surface has a first distance to a heat source and the second outer surface has a second distance to a cooling device and wherein the second outer surface has a conductive doping substance applied to it, comprising: producing a temperature gradient between the two opposing outer surfaces of the semi-conductor by heating the first outer surface, with even distribution over the first outer surface to a working temperature of the thermo-migration process of 800.degree. C. to 1100.degree. C.; and cooling the second outer surface with even distribution over the second outer surface; adjusting at least one of the total efficiency of the heat input into the semi-conductor and the efficiency distribution of the heat input over the first outer surface of the semi-conductor to be heated depending upon the temperature measured on at least one temperature measurement point on the semi-conductor by changing the first and second distances.

2. A process according to claim 1 further comprising positioning the semi-conductor in a closed system filled with an inert gas which is a good heat conductor.

3. A process according to claim 2 wherein the inert gas comprises at least one of the group consisting of hydrogen and helium.

4. A process according to at least one of the preceding claims wherein the semi-conductor is movable perpendicularly to the plane between the heat source and the cooling device.

5. A process according to claim 1 wherein the first and second outer surfaces of the semi-conductor are positioned in areas separated from one another.

6. A process according to claim 1 wherein the heat radiation encounters the first outer surface of the semi-conductor in an essentially perpendicular way.

7. A process according to claim 1 wherein the semi-conductor is positioned on a sample plunger which can be moved in at least one plane, whereby this sample plunger is moved between a charging position and a radiation position.

8. A process according to claim 1 wherein the temperature of the semi-conductor is measured in a non-contact way with a pyrometric measurement device over an optical measurement channel.

9. A process according to claim 1 further comprising heating the semi-conductor with a temperature increase smaller than or equal to 30.degree. C./second, maintaining a constant temperature until the thermo-migration process is complete; cooling with decreasing heat radiation in a first cooling stage; and freely cooling down to a removal temperature.

10. A process according to claim 9 wherein the heating and cooling of the semi-conductor takes place according to a ramp function.

11. A process according to claim 1 wherein the semi-conductor is heated to a first given temperature of around 300.degree. C. to 400.degree. C., whereby after reaching the first given temperature of the semi-conductor the area surrounding the semi-conductor is purified whereby the semi-conductor is further heated to a second given temperature of around 600.degree. C. to 700.degree. C., whereby the conductive doping substance reacts with the semi-conducting body of the semi-conductor through droplet formation, and whereby subsequently there is heating to the working temperature of the migration process of around 900.degree. C. to 1100.degree. C., whereby after the end of the thermo-migration process the temperature of the semi-conductor is reduced to a third given temperature of around 650.degree. C., and subsequently the semi-conductor is cooled over a time span of around two to three minutes to a given removal temperature.

12. A process according to claim 7 further comprising moving the sample plunger into a removal and charging position; opening the sample plunger and taking up the semi-conductor; bringing the sample plunger into a closed position; emptying and rinsing the sample plunger with an inert gas; placing a cool liquid into the sample plunger; performing thermo-migration by heating and cooling the semi-conductor; moving the sample plunger into the removal and charging position; and removing the semi-conductor and placing the semi-conductor in a storage area preferably rinsed with nitrogen.

13. A device for producing electrically conductive passages in a disc-form semi-conductor by means of thermo-migration through the production of a temperature gradient between first and second outer surfaces of the semi-conductor and the application of a conductive doping substance on the second outer surface comprising: a semi-conductor support between a heat source and a cooling device for taking up the semi-conductor; a heat source that emits a homogenous heat radiation on the outer surface of the semi-conductor turned towards it when the semi-conductor is taken up by the support; a pyrometer measurement head for measuring the outer surface temperature of the semi-conductor during operation of the device; and wherein at least one of the distance between the support and the heat source and between the support and the cooling device is changeable depending upon the measured outer surface temperature.

14. A device according to claim 13 wherein the area between the heat source and the cooling device is encapsulated and is filled with an inert gas which is a good heat conductor.

15. A device according to claim 14 wherein the gas is hydrogen or helium.

16. A device according to claim 14 or claim 15 wherein the area in the plane of the support is sub-divided.

17. A device according to claim 14 wherein at least one of the gas pressure and the gas flow into at least one area can be changed.

18. A device according to claim 13 wherein the heat source comprises at least one of a directly or indirectly heated furnace.

19. A device according to claim 18 further comprising a plate corresponding essentially to the surface of the support, whereby this plate is heatable by means of at least one of electric resistive heating, inductive heating, electron beam heating and microwave heating.

20. A device according to claim 19 wherein the plate comprises a graphite material pyrolytically sealed with boron nitride.

21. A device according to claim 19 wherein the plate consists of purest ceramics.

22. A device according to claim 13 wherein the heat source comprises a halogen lamp field, which extends at least over the surface of the semi-conductor.

23. A device according to claim 13 or claim 22 wherein the heat source comprises crossed halogen lamp fields positioned in two planes.

24. A device according to claim 13 wherein a mirror reflector (13) is positioned on the side of the heat source oriented opposite the support.

25. A device according to claim 13 wherein the support comprises a frame, moveable in a plane parallel to the longitudinal extension of the heat source.

26. A device according to claim 13 wherein the support comprises pins or webs connected to the cooling device, whereby these pins or webs support the outer surface of the semi-conductor turned towards the cooling device in point-form or line-form.

27. A device according to claim 13 wherein the support comprises a sample plunger connected to the cooling device.

28. A device according to claim 27 wherein the sample plunger comprises a sample cylinder a sample head forming the covering surface of the sample cylinder and taking up the semi-conductor, a sample flange on the under side of the sample cylinder projecting outwards, and a lifting plate sealing the sample cylinder to the under side in a gas-proof way.

29. A device according to claim 28 wherein the sample plunger can, in an axial direction (Z direction), be inserted into and extracted from a recipient, which consists of a ray passage surface turned towards the heat source and a quartz cylinder.

30. A device according to claim 29 wherein the recipient is surrounded by a cylinder-form outer shell, and wherein the cylinder-form outer shell is cooled.

31. A device according to claim 28 wherein the pyrometer measurement head is centrally located within the sample cylinder of the sample plunger, wherein the pyrometer measurement head is oriented via a temperature measurement and gas channel and a measurement window situated in the temperature measurement and gas channel to the first outer surface of the semi-conductor.

32. A device according to claim 31 wherein the pyrometer measurement head has a finely adjustable focusing cone.

33. A device according to claim 31 or claim 32 wherein the pyrometer measurement head works with a wavelength of 2.2 .mu.m.

34. A device according to claim 31 wherein the pyrometer measurement head is fixed and adjusted on the sample plunger by means of a pyrometer flange and wherein the focusing cone of the pyrometer measurement head is oriented to the upper surface of the semi-conductor in such a way that there is a small measurement spot in the middle of the semi-conductor.

35. A device according to claim 34 wherein the measurement window comprises sapphire.

36. A device according to claim 13 wherein the sample head has three sample head planes, whereby the take-up of the semi-conductor is connected to the first sample head plane, which has the central temperature measurement and gas channel as well as several radially distributed gas channels fed diagonally through the first sample head plane, whereby a gas which is a good heat conductor is fed through these gas channels and exits via nozzle-form openings of the channels, flows under the semi-conductor and is fed through an opening in the base area of the sample cylinder; wherein the second sample head plane of the sample head has diagonal gas channels, the central temperature measurement and gas channel and cool water channels which lead to cooling elements; wherein the third sample head plane of the sample head has a cool liquid inlet, a cool liquid outlet, and a gas inlet and gas outlet for the process gas; and wherein the measurement window which is situated in the optical temperature measurement channel is admitted centrally into the third sample head plane of the sample head.

37. A device according to claim 36 wherein the three sample head planes consist of purest aluminum.

38. A device according to claim 35 wherein the measurement window comprises sapphire.

39. A device according to claim 17 wherein the sample head has three sample head planes, whereby the take-up of the semiconductor is connected to the first sample head plane, which has the central temperature measurement and gas channel as well as several radially distributed gas channels fed diagonally through the first sample head plane, whereby a gas which is a good heat conductor is fed through these gas channels and exits via nozzle-form openings of the channels, flows under the semiconductor and is fed through an opening in the base area of the sample cylinder, whereby the second sample head plane of the sample head has diagonal gas channels, the central temperature measurement and gas channel and cool water channels which lead to cooling elements, and whereby the third sample head plane of the sample head has a cool liquid inlet and a cool liquid outlet as well as a gas inlet and a gas outlet for the process gas, and whereby the measurement window which is situated in the optical temperature measurement channel is admitted centrically into the third sample head plane of the sample head.

40. A device according to claim 39 wherein the three sample head planes consist of purest aluminum.

41. A device according to claim 29 wherein the recipient is surrounded by a cylinder-form outer shell; wherein the cylinder-form outer shell is cooled; and wherein within the sample plunger is a cooling cylinder.

42. A device according to claim 29 wherein the recipient is surrounded by a cylinder-form outer shell; and wherein within the sample plunger is a cooling cylinder.