Ferroelectric non-volatile memory device

1. A ferroelectric non-volatile memory device comprising: a MOS or MIS cell transistor having a gate electrode; two ferroelectric capacitors which are connected in series and have respective first terminals connected to each other and to the gate electrode of said cell transistor and respective second terminals, said capacitors having substantially the same remnant polarization; first and second control lines connected to the respective second terminals of said two ferroelectric capacitors, said first control line corresponding to a bit line and said second control line corresponding to a plate line, respectively; and a single selector transistor having a gate electrode, said selector transistor connected in series to said capacitors and selectively turned on, said gate electrode connected to a word line; wherein data is stored by polarizing ferroelectric thin films of said capacitors in opposite directions with respect to the gate electrode of said cell transistor.

2. A ferroelectric non-volatile memory device comprising: a cell transistor fabricated by a field effect transistor having a gate electrode; two ferroelectric capacitors which are connected in series to each other, and have respective first terminals connected to the gate electrode of said cell transistor and respective second terminals, said two ferroelectric capacitors having substantially the same remnant polarization; first and second control lines connected to the second terminals of said two ferroelectric capacitors, respectively, said first control line corresponding to a bit line and said second control line corresponding to a plate line; a single selector transistor having a gate electrode, said selector transistor connected in series to said capacitors and selectively turned on, said gate electrode connected to a word line; and a driver connected to the second terminals via said first and second control lines to polarize ferroelectric thin films of said capacitors in opposite directions with respect to the gate electrode of said cell transistor to store data.

3. The memory device according to claim 2, wherein in data write, said driver applies a voltage to a gate electrode of said selector transistor in order to turn on said selector transistor, and generates a voltage for causing polarization corresponding to the data in said capacitors via said selector transistor.

4. The memory device according to claim 3, wherein in data read, said driver applies a voltage pulse to one of the second terminals of said capacitors via said selector transistor in order to read out data corresponding to a polarization direction of each of said capacitors.

5. The memory device according to claim 2, wherein said selector transistor is connected between one of said capacitors and the gate electrode of said cell transistor.

6. The memory device according to claim 2, wherein said selector transistor is connected between one of said capacitors and one of said second terminals.

7. The memory device according to claim 2, wherein said memory device further comprises a plate line, a bit line, and a word line, said capacitors include first and second capacitors, said first capacitor has one terminal connected to the gate electrode of said cell transistor and the other terminal connected to said plate line, said second capacitor has one terminal connected to the gate electrode of said cell transistor and the other terminal connected to said bit line via said selector transistor, and the gate electrode of said selector transistor is connected to said word line.

8. A ferroelectric non-volatile memory device comprising: a MOS or MIS cell transistor having a gate electrode; two ferroelectric capacitors which are connected to the gate electrode of said cell transistor and have substantially the same remnant polarization; and a selector transistor connected to one of said capacitors, wherein data is stored by polarizing ferroelectric thin films of said capacitors in opposite directions with respect to the gate electrode of said cell transistor, and one of said capacitors has one terminal connected to the gate electrode of said cell transistor and the other terminal connected to a bit line via said selector transistor, the other capacitor has one terminal connected to the gate electrode of said cell transistor and the other terminal connected to a plate line, and the gate electrode of said selector transistor is connected to a word line.

9. A ferroelectric non-volatile memory device comprising: a cell transistor constituted by a field effect transistor having a gate electrode; two ferroelectric capacitors which are series-connected to each other, connected to the gate electrode of said cell transistor, and have substantially the same remnant polarization; a selector transistor connected to one of said capacitors; and a driver configured to polarize ferroelectric thin films of said capacitors in opposite directions with respect to the gate electrode of said cell transistor to store data, said selector transistor being connected between one terminal of one of said capacitors and the gate electrode of said cell transistor.

10. A ferroelectric non-volatile memory device comprising: a cell transistor constituted by a field effect transistor having a gate electrode; two ferroelectric capacitors which are series-connected to each other, connected to the gate electrode of said cell transistor, and have substantially the same remnant polarization; a selector transistor connected to one of said capacitors; and a driver configured to polarize ferroelectric thin films of said capacitors in opposite directions with respect to the gate electrode of said cell transistor to store data, and wherein said memory device further comprising a plate line, a bit line, and a word line, said capacitors include first and second capacitors, said first capacitor has one terminal connected to the gate electrode of said cell transistor and the other terminal connected to said plate line, said second capacitor has one terminal connected to the gate electrode of said cell transistor and the other terminal connected to said bit line via said selector transistor, and the gate electrode of said selector transistor is connected to said word line.

11. The memory device according to claim 10, wherein said bit line and said plate line are arranged to be parallel to each other, and cross said word line.

12. The memory device according to claim 11, wherein said cell transistor has a grounded source and a drain connected to said word line.

13. The memory device according to claim 11, wherein said cell transistor has a grounded source and a drain connected to said bit line.

14. The memory device according to claim 11, wherein said cell transistor has a source connected to another bit line adjacent to said bit line, and a drain connected to said word line.

15. The memory device according to claim 11, wherein said cell transistor has a source connected to said word line and a drain connected to said bit line.

16. The memory device according to claim 10, wherein said word line and said plate line are arranged to be parallel to each other, and cross said bit line.

17. The memory device according to claim 16, wherein said cell transistor has a grounded source and a drain connected to said word line.

18. The memory device according to claim 16, wherein said cell transistor has a grounded source and a drain connected to said bit line.

19. The memory device according to claim 16, wherein said cell transistor has a source connected to said word line and a drain connected to said bit line.

20. The memory device according to claim 16, wherein said cell transistor has a source connected to another bit line adjacent to said bit line, and a drain connected to said word line.