A laser-annealing method includes the steps of a first step of cleaning a non-monocrystal silicon film formed on a substrate, and a second step of laser-annealing the non-monocrystal silicon film in an atmosphere containing oxygen therein, wherein the first and second steps are conducted continuously without being exposed to the air. Also, a laser-annealing device includes a cleaning chamber, and a laser irradiation chamber, wherein a substrate to be processed is transported between the cleaning chamber and the laser irradiation chamber without being exposed to the air.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for manufacturing a semiconductor device comprising the steps of: cleaning a surface of a semiconductor film comprising silicon over a substrate; and applying a linear laser beam to said semiconductor film to form a crystalline semiconductor film in an atmosphere selected from the group consisting of a mixture of oxygen and an inactive gas, and a cleaned air.
2. A method according to claim 1 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
3. A method according to claim 1 wherein said cleaning is performed by using HF aqueous solution an aqueous solution containing HF and H 2 O 2 .
4. A method according to claim 1 wherein said linear laser beam has an energy density of 100 to 500 mJ/cm 2 .
5. A method for manufacturing a semiconductor device comprising the steps of: removing a natural oxide film on a surface of a semiconductor film comprising silicon over a substrate; and applying a linear laser beam to said semiconductor film to form a crystalline semiconductor film in an atmosphere selected from the group consisting of a mixture of oxygen and an inactive gas, and a cleaned air.
6. A method according to claim 5 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
7. A method according to claim 5 wherein said cleaning is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
8. A method according to claim 5 wherein said linear laser beam has an energy density of 100 to 500 mJ/cm 2 .
9. A method for manufacturing a semiconductor device comprising the steps of: crystallizing a semiconductor film comprising silicon over a substrate; cleaning a surface of the crystallized semiconductor film; and applying a linear laser beam to the crystallized semiconductor film to improve the crystallinity thereof in an atmosphere selected from the group consisting of a mixture of oxygen and an inactive gas, and a cleaned air.
10. A method according to claim 9 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
11. A method according to claim 9 wherein said cleaning is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
12. A method according to claim 9 wherein said linear laser beam has an energy density of 100 to 500 mJ/cm 2 .
13. A method for manufacturing a semiconductor device comprising the steps of: crystallizing a semiconductor film comprising silicon over a substrate; removing a natural oxide film on a surface of the crystallized semiconductor film; and applying a linear laser beam to the crystallized semiconductor film to improve the crystallinity thereof in an atmosphere selected from the group consisting of a mixture of oxygen and an inactive gas, and a cleaned air.
14. A method according to claim 13 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
15. A method according to claim 13 wherein said cleaning is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
16. A method according to claim 13 wherein said linear laser beam has an energy density of 100 to 500 mJ/cm 2 .
17. A method for manufacturing a semiconductor device comprising the steps of: cleaning a surface of a semiconductor film comprising silicon over a substrate; forming an oxide film on the surface of said semiconductor film; and applying a linear laser beam to said semiconductor film in an atmosphere selected from the group consisting of a mixture of oxygen and an inactive gas, and a cleaned air.
18. A method according to claim 17 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
19. A method according to claim 17 wherein said cleaning is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
20. A method according to claim 17 wherein said linear laser beam has an energy density of 100 to 500 mJ/cm 2 .
21. A method for manufacturing a semiconductor device comprising the steps of: removing a natural oxide film on a surface of a semiconductor film formed over a substrate; forming an oxide film on the surface of said semiconductor film; and applying a linear laser beam to said semiconductor film in an atmosphere selected from the group consisting of a mixture of oxygen and an inactive gas, and a cleaned air.
22. A method according to claim 21 wherein said inactive gas is selected from the group consisting of nitrogen, helium and argon.
23. A method according to claim 21 wherein said cleaning is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
24. A method according to claim 21 wherein said linear laser beam has an energy density of 100 to 500 mJ/cm 2 .
25. A method for manufacturing a semiconductor device comprising the steps of: cleaning a surface of a semiconductor film comprising silicon over a substrate; and applying a linear laser beam to said semiconductor film to form a crystalline semiconductor film in an atmosphere selected from the group consisting of a mixture of oxygen and an inactive gas, and wherein said applying said linear laser beam is sequentially performed after said cleaning without exposing said semiconductor film to the air.
26. A method according to claim 25 , wherein said inactive gas is selected from the group consisting of nitrogen, helium, and argon.
27. A method according to claim 25 , wherein said cleaning is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
28. A method for manufacturing a semiconductor device comprising the steps of: removing a natural oxide film on a surface of a semiconductor film comprising silicon over a substrate; and applying a linear laser beam to said semiconductor film to form a crystalline semiconductor film in an atmosphere selected from the group consisting of a mixture of oxygen and an inactive gas, and wherein said applying said linear laser beam is sequentially performed after said cleaning without exposing said semiconductor film to the air.
29. A method according to claim 28 , wherein said inactive gas is selected from the group consisting of nitrogen, helium, and argon.
30. A method according to claim 28 , wherein said cleaning is performed by using HF aqueous solution or an aqueous solution containing HF and H 2 O 2 .
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 3, 1999
February 19, 2002
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