The present invention discloses a method of manufacturing a capacitor in a semiconductor device which is directed to solve the problem of reduction of capacitance occurring when manufacturing a capacitor of a MIS structure using poly-silicon as an underlying electrode and metal as an upper electrode in a capacitor using Ta2O5 as a dielectric film. In order to solve the problem, the present invention forms an underlying electrode using metal having a good oxide-resistant such as TiSiN. Thus, the present invention could not only lower the thickness of the effective oxide film of Ta2O5 when depositing Ta2O5 or performing a thermal process for crystallization but also prevent increase of a leak current due to oxidization of the underlying electrode and the diffusion prevention film, thus securing the capacitance of the capacitor and improving the electric characteristic of the capacitor.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a capacitor in a semiconductor device, comprising the steps of: providing a semiconductor substrate in which a contact plug having a recess is formed; forming a contact film and a diffusion prevention film within the recess of the contact plug, said diffusion prevention film being formed by depositing TiSiN by means of a chemical vapor deposition method; forming a sacrificial oxide film in which a hole pattern through the diffusion prevention film is formed; forming an oxide-resistant conductive layer on the entire structure including the sacrificial oxide film in which the hole pattern is formed; remaining the oxide resistant conductive layer in the hole pattern and removing the sacrificial oxide film, thereby forming an underlying electrode of a cylindrical structure; forming a Ta 2 O 5 dielectric film on the underlying electrode; and forming an upper electrode on the dielectric film.
2. The method of manufacturing a capacitor in a semiconductor device according to claim 1 , wherein said contact film is formed of titanium silicide or tantalum silicide.
3. The method of manufacturing a capacitor in a semiconductor according to claim 1 , wherein said diffusion prevention film is formed by blanket etching process or chemical mechanical polishing process, after it is deposited with TiSiN by adding any one of SiCl 4 ,SiH 2 Cl 2 and SiHCl 3 in TCl 4 NH 3 or is deposited with TiSiN by adding any one of SiCl 4 , SiH 2 Cl 2 and SiHCl 3 in a precursor such as TDMAT or TDEAT.
4. The method of manufacturing a capacitor in a semiconductor device according to claim 1 , wherein said oxide-resistant conductive layer is TiSiN that is deposited by adding any one of SiCl 4 , SiH 2 Cl 2 and SiHCl 3 in TiC 4 NH 3 or by adding any one of SiCl 4 , SiH 2 Cl 2 and SiHCl 3 in a precursor such as TDMAT or TDEAT.
5. The method of manufacturing a capacitor in a semiconductor device according to claim 1 , wherein said underlying electrode is formed using any one of TiSiN, Pt, Ir, Ru, lrO 2 and RuO 2.
6. The method of manufacturing a capacitor in a semiconductor device according to claim 1 , wherein said upper electrode is formed using any one of TiSiN, TiN and WN.
7. The method according to claim 1 , wherein the step of forming the oxide-resistant conductive layer comprises adding any one of SiCl 4 , SiH 2 Cl 2 and SiHCl 3 in TCl 4 NH 3 to thereby form a TiSiN oxide-resistant conductive layer.
8. A method ofmanufacturing a capacitor in a semiconductor device, comprising the steps of: providing a semiconductor substrate; forming a contact hole in the semiconductor substrate; forming a contact plug in the contact hole; forming a contact film on top of the contact plug within the contact hole; forming a TiSiN diffusion prevention film by means of a chemical vapor deposition process, on top of the contact film in the contact hole; forming a sacrificial oxide film on the semiconductor substrate including on the TiSiN diffusion prevention film; forming a cylindrical hole pattern in the sacrificial oxide film to thereby expose the TiSiN diffusion prevention film; forming an oxide-resistant conductive layer on the sacrificial oxide film including sidewalls of the cylindrical hole pattern and on the exposed TiSiN diffusion prevention film; removing the sacrificial oxide film along with the oxide-resistant conductive layer on top of the sacrificial oxide film, while leaving only the sacrificial oxide film on sidewalls of the cylindrical hole pattern and on the exposed TiSiN diffusion prevention film, to thereby form an underlying electrode having a cylindrical structure; forming a Ta 2 O 5 dielectric film on the underlying electrode; and forming an upper electrode on the Ta 2 O 5 dielectric film.
9. The method according to claim 8 , wherein the step of forming the oxide-resistant conductive layer comprises adding any one of SiCl 4 , SiH 2 Cl 2 and SiHCl 3 in TCl 4 NH 3 to thereby form a TiSiN oxide-resistant conductive layer.
10. The method according to claim 9 , wherein the upper electrode is also formed of TiSiN.
11. A method ofmanufacturing a capacitor in a semiconductor device, comprising the steps of: providing a semiconductor substrate; forming a contact hole in the semiconductor substrate; forming a contact plug in the contact hole; forming a contact film on top of the contact plug within the contact hole; forming a TiSiN diffusion prevention film on top of the contact film in the contact hole; forming a sacrificial oxide film on the semiconductor substrate including on the TiSiN diffusion prevention film; forming a cylindrical hole pattern in the sacrificial oxide film to thereby expose the TiSiN diffusion prevention film; forming an oxide-resistant conductive layer on the sacrificial oxide film including sidewalls of the cylindrical hole pattern and on the exposed TiSiN diffusion prevention film; removing the sacrificial oxide film along with the oxide-resistant conductive layer on top of the sacrificial oxide film, while leaving only the sacrificial oxide film on sidewalls of the cylindrical hole pattern and on the exposed TiSiN diffusion prevention film, to thereby form an underlying electrode having a cylindrical structure; forming a Ta 2 O 5 dielectric film on the underlying electrode; and forming an upper electrode on the Ta 2 O 5 dielectric film.
12. The method according to claim 11 , wherein the a TiSiN diffusion prevention film is formed by a chemical vapor deposition process.
13. The method according to claim 12 , wherein the step of forming the oxide-resistant conductive layer comprises adding any one of SiCl 4 , SiH 2 Cl 2 and SiHCl 3 in TCl 4 NH 3 to thereby form a TiSiN oxide-resistant conductive layer.
14. The method according to claim 13 , wherein the upper electrode is also formed of TiSiN.
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September 11, 2000
March 12, 2002
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