Methods incorporating detectable atoms into etching processes

1. A method of etching, comprising: a material over a substrates the material comprising a lower portion near the substrate and an upper portion above the lower portion; providing a quantity of detectable atoms within the material, the detectable atoms being provided at a different concentration in the lower portion than in the upper portion; etching into the material and forming etching debris; detecting the detectable atoms in the debris; and wherein the detectable atoms comprise atoms selected from the group consisting of lanthanides, actinides, calcium, and mixtures thereof.

2. A semiconductor processing method, comprising: providing detectable atoms within a material, the detectable atoms being provided at a greater concentration at two elevationally separated locations than in a region between the two elevationally separated locations, the detectable atoms being different elements from elements of the material; the material comprising silicon and oxygen; etching the material and forming etching debris; and monitoring the debris for the detectable atoms to determine when the etch has penetrated one or more of the elevational locations.

3. The method of claim 2 wherein the etching forms an opening extending through both of the two elevationally separated locations.

4. The method of claim 2 wherein the detectable atom concentration in one of the two elevationally separated locations is about the same as the detectable atom concentration in the other of the two elevationally separated locations.

5. The method of claim 2 wherein the detectable atom concentration in the two elevationally separated locations is at least about one part per million on an atomic basis.

6. A semiconductor processing method, comprising: providing detectable atoms within a material the detectable atoms being provided at a greater concentration at two elevationally separated locations than in a region between the two elevationally separated locations; etching the material and forming etching debris; monitoring the debris for the detectable atoms to determine when the etch has penetrated one or more of the elevational locations; and wherein the detectable atom concentration in the two elevationally separated locations is less than or equal to about 0.1% on an atomic basis.

7. A method of etching, comprising: forming a material over a substrate, the material comprising detectable atoms provided at a greater concentration at two elevationally separated locations than in a region between the two elevationally separated locations; the material comprising silicon and oxygen; the detectable atoms being different elements than silicon and oxygen; etching into the material and forming etching debris; detecting the detectable atoms in the debris; and estimating at least one of a rate or a location of the etch from the detection of the detectable atoms.

8. The method of claim 7 further comprising determining a time to terminate the etch from the detection of the detectable atoms.

9. The method of claim 7 wherein the detectable atoms comprise atoms selected from the group consisting of yttrium, lanthanides, actinides, calcium, magnesium, and mixtures thereof.

10. A method of etching comprising detecting a presence of a species during etching of a material and predicting at least in part from said detecting substantial completion of said etching through the material, the species comprising atoms selected from the group consisting of lanthanides, actinides, calcium, and mixtures thereof.

11. A method of etching, comprising: providing a species into a top of a silicon-comprising material to a known depth; detecting the species during the etching; and determining an etch rate from the detected species, the etch rate being determined without stopping the etch.

12. The method of claim 11 wherein the providing the species comprises implanting or gas phase doping.

13. A method of etching, comprising: providing a species into a top of a material to a known depth; detecting the species during the etching; determining an etch rate from the detected species, the etch rate being determined without stopping the etch; and wherein the species comprises atoms selected from the group consisting of yttrium, lanthanides, actinides, calcium, magnesium, and mixtures thereof.

14. A semiconductor processing method, comprising: forming alternating first and second layers, the alternating layers comprising at least two first layers and at least one second layer, the first layers comprising a first material and the second layer comprising a second material, the second material comprising detectable atoms at a different concentration than the first material; the first and second materials comprising silicon; etching through one or more of the alternating layers and forming etching debris; monitoring the debris for the detectable atoms to determine when the etch has penetrated the second material; and wherein the detectable atoms comprise atoms selected from the group consisting of yttrium, lanthanides, actinides, calcium, magnesium, and mixtures thereof.

15. A semiconductor processing method, comprising: forming alternating first and second layers, the alternating layers comprising at least two first layers and at least one second layer, the first layers comprising a first material and the second layer comprising a second material, the second material comprising detectable atoms at a different concentration than the first material; etching through one or more of the alternating layers and forming etching debris; monitoring the debris for the detectable atoms to determine when the etch has penetrated the second material; and wherein the detectable atoms comprise one or more actinides.

16. A semiconductor processing method, comprising: forming alternating first and second layers, the alternating layers comprising at least two first layers and at least one second layer, the first layers comprising a first material and the second layer comprising a second material the second material comprising detectable atoms at a different concentration than the first material; etching through one or more of the alternating layers and forming etching debris; monitoring the debris for the detectable atoms to determine when the etch has penetrated the second material; and wherein the detectable atoms comprise one or more lanthanides.

17. A semiconductor processing method, comprising: forming alternating first and second layers, the alternating layers comprising at least two first layers and at least one second layer, the first layers comprising a first material and the second layer comprising a second material, the second material comprising detectable atoms at a different concentration than the first material; etching through one or more of the alternating layers and forming etching debris; monitoring the debris for the detectable atoms to determine when the etch has penetrated the second material; and wherein the detectable atoms comprise calcium.

18. A semiconductor processing method, comprising: forming alternating first and second layers, the alternating layers comprising at least two first layers and at least one second layer, the first layers comprising a first material and the second layer comprising a second material, the second material comprising detectable atoms at a different concentration than the first material; etching through one or more of the alternating layers and forming etching debris; monitoring the debris for the detectable atoms to determine when the etch has penetrated the second material; and wherein the detectable atoms comprise magnesium.

19. A semiconductor processing method, comprising: forming a second material layer over a substrate; forming a first material layer over the second material layer, the second material comprising indicator atoms at a different concentration than the first material, the indicator atoms comprising atoms selected from the group consisting of yttrium, lanthanides, actinides, calcium, and mixtures thereof; exposing the first material layer to etching conditions to expose the second material to the etching conditions, the etching conditions releasing indicator atoms from the second material layer once the first material is removed to expose the second material; and detecting the released indicator atoms to determine when the etching has penetrated through the first material layer.

20. The method of claim 19 wherein the first material comprises a photoresist.

21. A semiconductor processing method, comprising: providing a semiconductive substrate; forming alternating first and second layers over the substrate, the alternating layers comprising at least two first layers and at least two second layers, the first layers consisting essentially of a first material and the second layers comprising a second material, the second material comprising a mixture of indicator atoms and the first material, the indicator atoms being different elements from elements comprised by the first material; etching through the alternating layers, the etching forming debris; and monitoring the debris for the indicator atoms to determine an etch rate.

22. The method of claim 21 wherein the indicator atoms are present only in the second layers.

23. The method of claim 21 wherein a lowest second layer is formed between the substrate and a lowest of the first layers, the etching being continued until the lowest of the second layers is etched, the etching of the lowest second layer being detected by the monitoring.

24. A semiconductor processing method, comprising: providing a semiconductive substrate; forming alternating first and second layers over the substrate, the alternating layers comprising at least two first layers and at least two second layers, the first layers consisting essentially of a first material and the second layers comprising a second material, the second material comprising a mixture of indicator atoms and the first material; etching through the alternating layers the etching forming debris; monitoring the debris for the indicator atoms to determine an etch rate; and the method further comprising, forming a patterned photoresist over the alternating layers, the patterned photoresist leaving portions of the alternating layers exposed, the etching removing such exposed portions and also removing the photoresist, an uppermost second layer being between an uppermost first layer and the photoresist and being an indicator of the photoresist being removed.

25. The method of claim 21 wherein all of the second layers comprise common indicator atoms.

26. A semiconductor processing method comprising: providing a semiconductive substrate; forming alternating first and second layers over the substrate the alternating layers comprising at least two first layers and at least two second layers, the first layers consisting essentially of a first material and the second layers comprising a second material, the second material comprising a mixture of indicator atoms and the first material; etching through the alternating layers, the etching forming debris; monitoring the debris for the indicator atoms to determine an etch rate; and wherein one of the second layers comprises different indicator atoms than the other of the second layers.

27. A semiconductor processing method, comprising: providing a semiconductive substrate; forming alternating first and second layers over the substrate, the alternating layers comprising at least two first layers and at least two second layers, the first layers consisting essentially of a first material and the second layers comprising a second material, the second material comprising a mixture of indicator atoms and the first material; etching through the alternating layers, the etching forming debris; monitoring the debris for the indicator atoms to determine an etch rate; and wherein the indicator atoms comprise atoms selected from the group consisting of yttrium, lanthanides, actinides, calcium, magnesium and mixtures thereof.

28. A method of etching, comprising: forming a material over a monocrystalline silicon substrate, the material comprising a lower portion near the substrate and an upper portion above the lower portion; providing a quantity of detectable atoms within the material, the detectable atoms being provided at a different concentration in the lower portion than in the upper portion; etching into the material and forming etching debris; detecting the detectable atoms in the debris; and wherein the detectable atoms comprise atoms selected from the group consisting of yttrium, lanthanides, actinides, calcium, magnesium, and mixtures thereof.

29. A semiconductor processing method, comprising: forming a second material layer over a monocrystalline silicon substrate; forming a first material layer over the second material layer, the second material comprising indicator atoms at a different concentration than the first material, the indicator atoms comprising atoms selected from the group consisting of yttrium, lanthanides, actinides, calcium, magnesium, and mixtures thereof; exposing the first material layer to etching conditions to expose the second material to the etching conditions, the etching conditions releasing indicator atoms from the second material layer once the first material is removed to expose the second material; and detecting the released indicator atoms to determine when the etching has penetrated through the first material layer.

30. The method of claim 2 wherein the material comprises BPSG.