A polycide film is selectively formed in a bonding area of a silicon substrate. A BPSG film is formed as an interlayer insulating film comprising boron. Many contact holes are made, on the polycide film, in the BPSG film. Tungsten plugs are embedded in the contact holes. A film of titanium and a titanium compound is formed between the tungsten plugs and the aluminum film, and the BPSG film and the polycide film.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising: a semiconductor substrate, a polycide film selectively formed in a bonding area on the semiconductor substrate, an interlayer insulating film that is formed on the semiconductor substrate and includes boron, a bonding pad film arranged on the polycide film, and a film of titanium and a titanium compound that is formed between the polycide film and the bonding pad film to contact with the polycide film and the bonding pad film, wherein a plurality of contact holes are made in the interlayer insulating film on the polycide film, the holes penetrating the interlayer insulating film, and further the film of the titanium and the titanium compound is formed between the bonding pad film and the interlayer insulating film, and on bottom faces and side faces of the contact holes.
2. The semiconductor device according to claim 1 , wherein the bonding pad film comprises an aluminum film.
3. The semiconductor device according to claim 1 , wherein the polycide film is a lamination film that comprises an upper film comprising a silicide of a high melting-point metal, and a lower film comprising a polysilicon film.
4. The semiconductor device according to claim 1 , wherein a field oxide film is formed between the silicon substrate and the polycide film.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 10, 2000
July 9, 2002
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