An illumination optical system is revolved at a given speed around a rotation shaft and emanates exposure light onto a reticle. The light having passed through the reticle is projected onto a semiconductor substrate, by means of a projection optical system which is revolved around the rotation shaft such that a relative positional relationship between the illumination optical system and the projection optical system is maintained.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An aligner for forming a pattern on a semiconductor substrate by means of exposing comprising: a rotation shaft; an illumination optical system which is revolved around said rotation shaft and emanates exposure light, an optical axis of said exposure light is different from said rotation shaft; a reticle through which said exposure light originating from said illumination optical system is passed; and a projection optical system which is revolved around said rotation shaft such that a relative positional relationship between said illumination optical system and said projection optical system is maintained, and said projection optical system projecting said light passed through said reticle onto said semiconductor substrate.
2. The aligner for forming a pattern on a semiconductor substrate by means of exposing according to claim 1 , wherein said projection optical system includes a first reflection mirror, a second reflection mirror and a projection lens, which are disposed such that a relative positional relationship to said illumination optical system is maintained; said first reflection mirror reflects said light passed through said reticle in a horizontal direction; said second reflection mirror reflects said light reflected from said first reflection mirror in a vertical direction; and said projection lens projects said light reflected from said second reflection mirror onto said semiconductor substrate in a scale-down manner.
3. The aligner for forming a pattern on a semiconductor substrate by means of exposing according to claim 2 , wherein the ratio of a distance from an axis of said rotation shaft to a reflection surface of said first reflection mirror to a distance from said axis of said rotation shaft to a reflection surface of said second reflection mirror is equal to a scale-down factor of said projection lens.
4. The aligner for forming a pattern on a semiconductor substrate by means of exposing according to claim 1 , wherein said illumination optical system and said projection optical system are revolved at a given speed.
5. The aligner for forming a pattern on a semiconductor substrate by means of exposing according to claim 4 , wherein said illumination optical system and said projection optical system are revolved at a speed of 0.5 to 3.0 m/sec.
6. The aligner for forming a pattern on a semiconductor substrate by means of exposing according to claim 1 , wherein a plurality of illumination optical systems are provided around said rotation shaft at uniform intervals, and a plurality of projection optical systems are provided so as to correspond to said respective illumination optical systems.
7. The aligner for forming a pattern on a semiconductor substrate by means of exposing according to claim 6 , wherein said plurality of illumination optical systems include illumination optical systems which emanate exposure light of different wavelengths.
8. The aligner for forming a pattern on a semiconductor substrate by means of exposing according to claim 6 , wherein said plurality of projection optical systems include projection optical systems having lenses of different numerical apertures.
9. The aligner for forming a pattern on a semiconductor substrate by means of exposing according to claim 1 , wherein a plurality of reticles are provided around said rotation shaft, and a plurality of semiconductor substrates are provided around said rotation shaft so as to correspond to said respective reticles.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 16, 2001
July 30, 2002
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