An integrated circuit is composed of a substrate, a first conductor formed on the substrate, an insulating film formed on the first conductor and the substrate, a second conductor formed on the insulating film, a first interconnection formed in the insulating film and a second interconnection formed on the insulating film. The first conductor and the second conductor constitute a pair of transmission lines. The first interconnection and the second interconnection constitute a circuit. The pair of transmission lines and the circuit are separated such that the circuit does not substantially interfere electrically with the pair of transmission lines.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An integrated circuit comprising; a substrate; a first conductor formed on said substrate; an insulating film formed on said first conductor and said substrate; a second conductor formed on said insulating film; a first interconnection formed in said insulating film; a second interconnection formed on said insulating film, wherein said first conductor and said second conductor constitute a pair of transmission lines, and said first interconnection and said second interconnection constitute a circuit, and said pair of transmission lines and said circuit are separated such that said circuit does not substantially interfere electrically with said pair of transmission lines; and, wherein said insulating film includes a plurality of interlayer insulating films and said first interconnection is placed between two of said plurality of interlayer insulating films.
2. An integrated circuit according to claim 1 , wherein thicknesses of said plurality of interlayer insulating films are defined based on characteristic impedance of said pair of transmission lines.
3. An integrated circuit according claim 1 , wherein at least one of said plurality of interlayer insulating films are formed of dielectric material having a dielectric constant smaller than that of silicon dioxide.
4. An integrated circuit comprising: a substrate; a first conductor formed on said substrate; an insulating film formed on said first conductor and said substrate; a second conductor formed on said insulating film; a first interconnection formed in said insulating film; a second interconnection formed on said insulating film, wherein said first conductor and said second conductor constitute a pair of transmission lines, and said first interconnection and said second interconnection constitute a circuit, and said pair of transmission lines and said circuit are separated such that said circuit does not substantially interfere electrically with said pair of transmission lines; and, wherein thickness of said first conductor is substantially equal to or thinner than a skin depth determined based on a signal transmitted on said pair of transmission lines.
5. An integrated circuit comprising: a substrate; a first conductor formed on said substrate; an insulating film formed on said first conductor and said substrate; a second conductor formed on said insulating film; a first interconnection formed in said insulating film; a second interconnection formed on said insulating film, wherein said first conductor and said second conductor constitute a pair of transmission lines, and said first interconnection and said second interconnection constitute a circuit, and said pair of transmission lines and said circuit are separated such that said circuit does not substantially interfere electrically with said pair of transmission lines; and, wherein thickness of said second conductor is substantially equal to or thinner than a skin depth determined based on a signal transmitted on said pair of transmission lines.
6. An integrated circuit comprising: a substrate; a first conductor formed on said substrate; an insulating film formed on said first conductor and said substrate; a second conductor formed on said insulating film; a first interconnection formed in said insulating film; a second interconnection formed on said insulating film, wherein said first conductor and said second conductor constitute a pair of transmission lines, and said first interconnection and said second interconnection constitute a circuit, and said pair of transmission lines and said circuit are separated such that said circuit does not substantially interfere electrically with said pair of transmission lines; and, wherein said substrate is made of semiconductor, and a diffusion layer is formed in surface portion of said substrate, and said first conductor is formed on said diffusion layer.
7. An integrated circuit according to claim 6 , wherein said insulating film includes a plurality of interlayer insulating films and said first interconnection is placed between two of said plurality of interlayer insulating films.
8. An integrated circuit according to claim 7 , wherein thicknesses of said plurality of interlayer insulating films are defined based on characteristic impedance of said pair of transmission lines.
9. An integrated circuit according to claim 7 , wherein at least one of said plurality of interlayer insulating films are formed of dielectric material having a dielectric constant smaller than that of silicon dioxide.
10. An integrated circuit according to claim 6 , wherein thickness of said first conductor is substantially equal to thinner than a skin depth determined based on a signal transmitted on said a pair of transmission lines.
11. An integrated circuit according to claim 6 , wherein thickness of said second conductor is substantially equal to less than a skin depth determined based on a signal transmitted on said a pair of transmission lines.
12. An integrated circuit comprising: a substrate; a first conductor formed on said substrate; an insulating film formed on said first conductor and said substrate; a second conductor formed on said insulating film; a first interconnection formed in said insulating film; a second interconnection formed on said insulating film, wherein said first conductor and said second conductor constitute a pair of transmission lines, and said first interconnection and said second interconnection constitute a circuit, and said pair of transmission lines and said circuit are separated such that said circuit does not substantially interfere electrically with said pair of transmission lines; wherein said substrate includes a semiconductor substrate; and, a plurality of silicon oxide films which are formed on said semiconductor substrate at the same time, wherein said first conductor is formed on one of said plurality of silicon oxide films and remaining ones of plurality of silicon oxide films are used as gate oxide films of MOS transistors.
13. An integrated circuit according to claim 12 , wherein said insulating film includes a plurality of interlayer insulating films and said first interconnection is placed between two of said plurality of interlayer insulating films.
14. An integrated circuit according to claim 13 , wherein thicknesses of said plurality of interlayer insulating films are defined based on characteristic impedance of said pair of transmission lines.
15. An integrated circuit according to claim 13 , wherein at least one of said plurality of interlayer insulating films are made of dielectric material having a dielectric constant smaller than that of silicon dioxide.
16. An integrated circuit according to claim 12 , wherein thickness of said first conductor is substantially equal to or less than a skin depth determined based on a signal transmitted on said pair of transmission lines.
17. An integrated circuit according to claim 12 , wherein thickness of said second conductor is substantially equal to or less than a skin depth determined based on a signal transmitted on said pair of transmission lines.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 5, 2000
August 13, 2002
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