Using UV/VIS spectrophotometry to regulate developer solution during a development process

1. A system for regulating in-situ developer temperature, comprising: at least one lamp operative to heat a portion of a developer; a lamp driving system for driving the at least one lamp; a system for directing radiation to the portion of the developer; a measuring system comprising a UV/Vis spectrophotometry system for measuring parameters of the developer based on radiation reflected from the developer; and a processor operatively coupled to the measuring system and the lamp driving system, the processor receiving developer parameter data from the measuring system and the processor using the data to at least partially control the lamp so as to regulate the temperature associated with the portion of the developer.

2. The system of claim 1 , the processor being operatively coupled to the UV/Vis spectrophotometry system, the processor analyzing data relating to developer temperature received from the UV/Vis spectrophotometry system, and the processor basing control of the at least one lamp at least partially on the analyzed data.

3. The system of claim 2 , the data further relating to thickness of the developer.

4. The system of claim 2 , the data further relating to color of the developer.

5. The system of claim 2 , the data further relating to absorptivity of the developer.

6. The system of claim 1 , the processor mapping the developer into a plurality of grid blocks, and making a determination of developer temperature at a grid block.

7. The system of claim 6 , wherein the processor determines an existence of an unacceptable temperature for at least a portion of the developer based upon the determined temperature differing from an acceptable value.

8. The system of claim 7 , wherein the processor controls the at least one lamp to regulate the temperature of the developer portion to an acceptable value.

9. The system of claim 1 , the developer including a substantially inert material which causes a color of the developer to vary with changes in developer temperature.

10. The system of claim 9 , the substantially inert material including europium chelate.

11. A method for regulating in-situ developer temperature and exposure time, comprising: defining a substrate as a plurality of portions; defining a developer deposited over the substrate as a plurality of portions; directing radiation having a wavelength from 190 nm to about 800 nm onto at least one of the portions of the substrate and of the developer; collecting radiation intensity reflected from at least one of the portions of the substrate and of the developer; during development, analyzing the reflected radiation intensity to determine the temperature of the at least one portion of the developer and to determine an image size of the substrate portion; controlling a heating device to regulate the temperature of the developer portion; and controlling a timing mechanism to regulate the exposure time of the substrate portion.

12. The method of claim 11 , further comprising using an UV/Vis spectrophotometry system to process the reflected radiation.

13. The method of claim 12 , further comprising using a processor to control the at least one heating device based at least partially on data received from the UV/Vis spectrophotometry system.

14. A method for regulating in-situ temperature and exposure time of a developer, the developer overlying a substrate comprising an image pattern, comprising: partitioning the developer into a plurality of grid blocks; using a plurality of heaters to heat the developer, each heater functionally corresponding to a respective grid block; using a plurality of timers to time the exposure time of the developer, each time sensor corresponding to a respective grid block; determining temperatures corresponding to the respective grid blocks of the developer using a UV/Vis spectrophotometry system; determining exposure times corresponding to the respective grid blocks of the developer using a UV/Vis spectrophotometry system; and using a processor to coordinate control of the heaters and timers, respectively, in accordance with determined temperatures and exposure times of the respective grid blocks of the developer.

15. The method of claim 14 , wherein determining exposure time of portions of the developer comprises: generating a profile of the substrate; and comparing the generated profile with a database, the database comprising profiles corresponding to substrates having known exposure times to find a closest match to the generated profile.

16. The method of claim 15 , wherein generating a profile of the substrate comprises: irradiating the substrate with radiation having a wavelength from 190 nm to about 800 nm; collecting the radiation reflected from the substrate; and determining a spectrum of reflected intensity of the radiation against the substrate using UV/Vis spectrophotometer techniques.

17. A system for regulating in-situ temperature of a developer, comprising: means for defining a substrate as a plurality of portions; means for defining a developer deposited over the substrate as a plurality of portions; means for directing radiation having a wavelength from 190 nm to about 800 nm onto at least one of the portions of the substrate and of the developer; means for collecting radiation intensity reflected from the at least one portion corresponding to the substrate and to the developer; during development, means for analyzing the reflected radiation intensity to determine the temperature of the at least one portion of the developer and to determine an image size of the at least one portion of the substrate; means for controlling a heating device to regulate the temperature of the developer portion; and means for controlling a timing mechanism to regulate the exposure time of the substrate portion.