A dense semiconductor flip-chip device assembly is provided with a heat sink/spreading/dissipating member which is formed as a paddle of a metallic paddle frame in a strip of paddle frames. Dice are bonded to the paddles by e.g. conventional die attach methods, enabling bump attachment and testing to be conducted before detachment from the paddle frame strip.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of assembling a semiconductor device assembly, comprising: providing a semiconductor die having an active surface having a plurality of bond pads thereon and an opposing second surface; providing a metallic paddle frame having left and right side rails and having a paddle located between said side rails for receiving said semiconductor die; providing at least one conductive projection on each bond pad of said plurality of bond pads for connection to a substrate; attaching the opposing second surface of said semiconductor die to said paddle; and disconnecting said paddle having said semiconductor die attached thereto from said metallic paddle frame.
2. The method of claim 1 , further comprising: testing said semiconductor die for electrical properties while said paddle is located between said side rails of said metallic paddle frame.
3. The method of claim 1 , further comprising: wherein said substrate includes a printed circuit board having a plurality of circuits thereon; and connecting said plurality of bond pads of said semiconductor die to said plurality of circuits of said printed circuit board.
4. The method of claim 1 , wherein said semiconductor die is attached to said paddle by an electrically non-conductive adhesive material.
5. The method of claim 4 , wherein said non-conductive adhesive material comprises a polymer.
6. The method of claim 4 , wherein said non-conductive adhesive material comprises one of polyimide and epoxy.
7. The method of claim 4 , wherein said non-conductive adhesive material comprises a polyimide tape.
8. The method of claim 1 , wherein said opposing second surface of said semiconductor die is attached to said paddle by an electrically conductive material.
9. The method of claim 8 , wherein said electrically conductive material comprises a eutectic material.
10. The method of claim 9 , wherein said eutectic material comprises a gold-silicon eutectic layer.
11. The method of claim 8 , wherein said electrically conductive material comprises a polymer filled with conductive particles.
12. The method of claim 1 , further comprising: providing a plurality of conductive bumps on said plurality of bond pads on said active surface of said semiconductor die for conductive ball-grid-array connection to said substrate.
13. The method of claim 1 , further comprising: providing a substrate having a plurality of circuits thereon; and connecting said plurality of bond pads on said active surface of said semiconductor die by a conductive ball-grid-array connection to said plurality of circuits on said substrate.
14. The method of claim 13 , wherein said substrate is connected to said plurality of bond pads on said active surface of said semiconductor die by said conductive ball-grid-array connection to said substrate.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 4, 2000
January 14, 2003
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