A TAB tape with a stiffener is prepared by bonding a one-metal TAB tape 20 having a structure wherein a circuit pattern 21 is formed on either surface of a first tape base material, a part thereof is covered with an insulating film 2, and a via hole 12 is defined on a connecting regional section 25 for via, to a tape 30 for second metal prepared by providing a metallic foil layer 14 on either surface of a second tape base material 15 through an adhesive layer 15; the connecting regional section 25 for via on the upper edge of a via hole is electrically connected with a part of the metallic foil layer 14 on the bottom of the hole by means of conducting means (4, 16, and 18), and at the same time, an exposed portion 32 of the metallic foil layer 14, which has not been covered with the one-metal TAB tape 20, is connected to an electrode 71 of a ground line in the semiconductor 7 by means of a bonding wire 83 to lead a ground potential. Thus, an inexpensive TAB tape with a stiffener having equivalent electrical characteristics to that in the case where a conventional two-metal and one-base material TAB tape is used, and a TBGA semiconductor device using such TAB tape with a stiffener is obtained.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A TAB tape with a stiffener, comprising: a one-metal TAB tape having a circuit pattern containing a signal circuit being formed on either surface of a first tape base material made of an insulating film, a part of said circuit pattern being covered with an insulating film, and a via hole penetrating said first tape base material being defined on a connecting regional section used for a via, which is one of connection regions required for electrical connections and is not covered with the insulating film; a tape for a second metal having a metallic foil layer functioning as a ground layer on either surface of a second tape base material made of an insulating film, being bonded in a bonding operation to said one-metal TAB tape through an adhesive layer having an opening corresponding to said via hole, the metallic foil layer being positioned on the opposite surface of said first tape base material; an exposed portion for wire bonding, which has not been covered with said one-metal TAB tape, which remains on said metallic foil layer in case of said bonding operation; and a stiffener made of a metallic sheet, being bonded onto a side of the tape for second metal of a two-metal and two-base material TAB tape prepared by said bonding operation through and adhesive.
2. A TAB tape with a stiffener as claimed in claim 1 , wherein: a connecting regional section for via on the upper edge of a blind via hole is electrically connected with a part of the metallic foil layer on the bottom of the hole by means of a conducting means in said blind via hole extending from the connecting regional section for via in said one-metal TAB tape through the via hole of said first tape base material and the opening in said adhesive layer to reach the metallic foil layer in said tape for second metal.
3. A TAB tape with a stiffener as claimed in claim 2 , wherein: a part of said blind via hole sealed with a resin so as to cover the conducting means and the connecting regional section for via.
4. A semiconductor device, comprising: a one-metal TAB tape having a circuit pattern on either surface of a first tape base material made of an insulating film and a via hole bored on a part thereof; a tape for second metal having an insulating film with a metallic foil layer functioning as a ground layer being bonded onto a portion immediately below the one-metal TAB tape on a first surface of said one-metal TAB tape through an adhesive layer having an opening corresponding to said via hole, the metallic foil layer being positioned on a surface of said first tape base material, a stiffener being bonded to said tape for second metal through an adhesive in a second surface of said one-metal TAB tape; a semiconductor device being mounted on the stiffener; a solder ball being molten to mount in a blind via hole, composed of said via hole and said opening, wherein a specific potential is given to said metallic foil layer situated immediately below the one-metal TAB tape through the adhesive layer; a partial region in the metallic foil layer on a side near to the semiconductor device being exposed from a boundary of the one-metal TAB tape; and the partial region being connected with an electrode of the semiconductor device by means of a bonding wire.
5. A semiconductor device as claimed in claim 4 , further comprising: a connecting regional section for via, capable of wire bonding, that is formed around the upper edge of said via hole; wherein the connection regional section is connected with a part of the metallic foil layer on the bottom in the hole by means of a bonding wire; the connecting regional section being covered with a resin; instead of melting a solder ball to mount in said blind via hole.
6. A semiconductor device as claimed in claim 4 , further comprising: a connecting lead section that extends on said via hole as a part of said circuit pattern; wherein the connecting lead section is folded; and the connecting lead section is fixed to a part of the metallic foil layer on the bottom of said hole by means of contact bonding or welding; instead of melting a solder ball to mount in said blind via hole.
7. A semiconductor device as claimed in claim 1 , wherein the insulating film is disposed directly against and below the exposed portion for wire bonding.
8. A semiconductor device as claimed in claim 4 , wherein the insulating film is disposed directly against and below the partial region in the metallic foil layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
June 29, 2001
January 21, 2003
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