By providing a semiconductor device including a charge transfer channel to one end of which electric charges supplied from a charge supply unit are input, and which includes a plurality of branching regions at an intermediate portion, a plurality of gate electrodes provided on the corresponding branching regions of the charge transfer channel via insulating films, an input-signal supply unit for supplying each of the gate electrodes with an input signal, a transfer electrode, provided on the charge transfer channel via a gate insulating film, for performing control so that the electric charges are transferred in a predetermined direction within the charge transfer channel, a conversion unit for coverting the transferred electric charges into a voltage, and a sense amplifier to which an output signal from the conversion unit is input, and by providing a semiconductor circuit which includes such a device, it is possible to reduce the scale of circuitry, increase the calculation speed, and reduce electric power consumption.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A majority calculation semiconductor device comprising: a charge transfer channel to one end of which electric charges supplied from a charge supply unit are input, and which includes a plurality of branching regions at an intermediate portion; an insulated reset gate electrode provided on one of said branching regions; independent insulated gate electrodes, each independent insulated gate electrode being provided on the corresponding one of the other branching regions; an insulated transfer electrode, provided on a common region of said charge transfer channel, for transferring the electric charges in a predetermined direction within said charge transfer channel; a conversion unit adapted to convert the transferred electric charges into a voltage which corresponds to the combined charges; and a resettable sense amplifier unit to which an output signal from said conversion unit is input and which produces outputs corresponding to said voltage following each resetting thereof; and wherein input signals are input to said independent insulated gate electrodes so that the charges corresponding to said input signals are transferred to said common region.
2. A semiconductor device comprising: a charge transfer channel to one end of which electric charges supplied from charge supply means are input, and which includes a plurality of branching regions at an intermediate portion, said charge transfer channel including means for inputting said electric charges to each of said branching regions in the same intervals; a plurality of gate electrodes provided on the corresponding branching regions of said charge transfer channel via insulating films; an input signal supply circuit connected to supply different signals to different ones of said gate electrodes during a given interval so that the charge in each channel corresponds to a respective one of said different signals; a transfer electrode, provided on said charge transfer channel via a gate insulating film, for performing control so that the electric charges are transferred in a predetermined direction within said charge transfer channel; conversion means for converting the transferred electric charges into a voltage which corresponds to the combined charges; and resettable sense amplifier means to which an output signal from said conversion means is input and which produces outputs corresponding to said voltage following each resetting thereof, the total amount of gate capacitance values of said gate electrodes corresponding to said input-supply means being substantially an odd multiple of a minimum capacitance value C of the gate capacitance of the respective gate electrodes.
3. A majority calculation semiconductor device comprising: a charge transfer channel to one end of which electric charges supplied from charge supply unit are input, and which includes a plurality of branching regions at an intermediate portion, an insulated reset gate electrode provided on one of said branching regions; an odd number of independent insulated gate electrodes, each being provided on the corresponding one of the other branching regions; an insulated transfer electrode, provided on a common region of said charge transfer channel, for transferring the electric charges in a predetermined direction within said charge transfer channel; a conversion unit adapted to convert the transferred electric charges into a voltage which corresponds to the combined charges; and a resettable sense amplifier unit to which an output signal from said conversion unit is input and which produces outputs corresponding to said voltage following each resetting thereof, wherein input signals are input to said independent insulated gate electrodes so that the charges corresponding to said input signals are transferred to said common region.
4. A majority calculation semiconductor device according to claim 3 , further comprising: an electrode to which a reset-signal is supplied by a reset-signal supply unit for supplying a reset signal, in addition to the odd number of gate electrodes at said branching regions to which said input signal is supplied.
5. A semiconductor circuit which includes a plurality of semiconductor devices, each comprising: a charge transfer channel to one end of which electric charges supplied from charge supply means are input, and which includes a plurality of branching regions at an intermediate portion; a plurality of gate electrodes provided on the corresponding branching regions of said charge transfer channel via insulating films; input-signal supply means for supplying each of said gate electrodes with an input signal; a transfer electrode, provided on said charge transfer channel via a gate insulating film, for performing control so that the electric charges are transferred in a predetermined direction within said charge transfer channel; conversion means for converting the transferred electric charges into a voltage which corresponds to the combined charges; and resettable sense amplifier means to which an output signal from said conversion means is input and which produces outputs corresponding to said voltage following each resetting thereof.
6. A semiconductor circuit which includes a semiconductor device comprising: a charge transfer channel to one end of which electric charges supplied from charge supply means are input, and which includes a plurality of branching regions at an intermediate portion, said charge transfer channel including means for inputting said electric charges to each of said branching regions in the same intervals; a plurality of gate electrodes provided on the corresponding branching regions of said charge transfer channel via insulating films; an input signal supply circuit connected to supply different signals to different ones of said gate electrodes during a given interval so that the charge in each channel corresponds to a respective one of said different signals; a transfer electrode, provided on said charge transfer channel via a gate insulating film, for performing control so that the electric charges are transferred in a predetermined direction within said charge transfer channel; conversion means for converting the transferred electric charges into a voltage which corresponds to the combined charges; resettable sense amplifier means to which an output signal from said conversion means is input and which produces outputs corresponding to said voltage following each resetting thereof; and a circuit for performing correlation calculation.
7. A semiconductor circuit according to claim 6 , further comprising a correlation calculation circuit used in a signal processing system.
8. A semiconductor circuit according to claim 7 , wherein the signal processing system includes an image-signal input device for inputting an image signal.
9. A semiconductor device comprising: a charge transfer channel to which electric charges are supplied from charge supply means, and which includes a plurality of branching regions, said charge transfer channel including means for inputting said electric charges to each of said branching regions in the same intervals; a plurality of gate electrodes provided on the corresponding branching regions via insulating films; an input signal supply circuit connected to supply different signals to different ones of said gate electrodes during a given interval so that the charge in each channel corresponds to a respective one of said different signals; a transfer electrode, adjacent to said gate electrodes, for transferring the electric charges in a predetermined direction within said charge transfer channel; conversion means for converting the transferred electric charges into a voltage which corresponds to the combined charges; resettable sense amplifier means to which an output signal from said conversion means is input and which produces outputs corresponding to said voltage following each resetting thereof; and a floating gate via which a signal transferred from said transfer electrode is input to said conversion means, said floating gate comprising a plurality of floating gates.
10. A semiconductor circuit which includes a plurality of semiconductor devices, each of said semiconductor devices comprising: a charge transfer channel to which electric charges are supplied from charge supply means, and which includes a plurality of branching regions; a plurality of gate electrodes provided on the corresponding branching regions via insulating films; input-signal supply means for supplying each of said gate electrodes with an input signal; a transfer electrode, adjacent to said gate electrodes, for transferring electric charges in a predetermined direction within said charge transfer channel; and conversion means for converting the electric charges transferred by said transfer electrode into a voltage, wherein an output of a first semiconductor device from among the plurality of semiconductor devices and/or an inverted output of the output of the first semiconductor device are/is input to a second semiconductor device from among the plurality of semiconductor devices.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 30, 1996
January 21, 2003
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.