The invention relates to an optical sensor consisting of an arrangement of pixel units, each comprising an optoelectronic converter for converting the incident radiation into a photoelectric current that depends on intensity and wavelength, an integrator median for deriving a measured value corresponding to the photoelectric current detected, and a controllable storage device for storing the measured value, and a readout control device for readout of the stored measured values based on one pixel unit, where the image striking the sensor can be assembled from the measured values based on pixel units. The object of creating an optical sensor permitting operation within a short exposure time is achieved by the fact that each pixel unit has integrator median (7, 8; 11, 12; 15, 16) and at least two parallel storage device (21, 22, 23), such that at least two measured values, each assigned to different spectral ranges of the incident radiation, can be detected and stored during the measurement period and then can be read out together to form the relevant color information for the pixel element.
Legal claims defining the scope of protection, as filed with the USPTO.
1. An optical sensor for assembling an image, comprising an arrangement of pixel units, each pixel unit receiving incident radiation of a portion of said image, each said pixel unit comprising: an optoelectronic converter for converting the incident radiation into a photoelectric current depending on intensity and wavelength of said incident radiation, wherein the optoelectronic converter is selectively controlled based on a selected spectral sensitivity; an integrator medium for deriving measured values corresponding to the detected photoelectric current and to the selected spectral sensitivity; at least two controllable parallel storage devices, such that at least two of said measured values, each assigned to different spectral ranges of the incident radiation, are stored during a measurement period and subsequently read out together to form the relevant color information for a pixel element representing said portion of said image; and an amplifier with an adjustable gain factor being provided for each of the at least two controllable parallel storage devices such that the gains in the effect in integration of the photoelectric currents are different from one another with regard to individual color components, wherein each said amplifier outputs a respective individual color signal.
2. An optical sensor according to claim 1 , wherein said at least two measured values, each assigned to different spectral ranges, are detected in chronological succession within the measurement period.
3. An optical sensor according to claim 1 wherein the sensor is a planar sensor.
4. An optical sensor according to claim 1 wherein the sensor is a line sensor.
5. An optical sensor according to claim 1 , wherein at least one of the spectral ranges of the optoelectronic converter is in the range of visible light.
6. An optical sensor according to claim 1 , wherein at least one of the spectral ranges of the optoelectronic converter is in the ultraviolet or infrared range.
7. An optical sensor according to claim 1 , wherein an analog-digital converter and at least two digital memories are provided downstream from the optoelectronic converter.
8. An optical sensor according to claim 1 , wherein additional optical layers are applied before a photoactive layer.
9. An optical sensor according to claim 1 , wherein a linear linking element is coupled to each of said amplifier, such that the individual color signals are linked according to its respective weighting.
10. An optical sensor according to claim 9 , wherein linking of said individual color signals occurs in the periphery of the sensor.
11. An optical sensor according to claim 1 , wherein a comparator device, which is deposited a reference signal for a preselectable color, is provided for each of the at least two storage devices.
12. An optical sensor according to claim 1 , wherein the relevant color information for the respective pixel element is relayed synchronously over separate readout lines.
13. An optical sensor according to claim 1 , wherein the integrator medium is provided with a period controlling device for determining an end point of the integration period, such that higher radiation intensities lead to shorter integration periods, and lower radiation intensities lead to longer integration periods.
14. An optical sensor according to claim 1 , wherein said optical sensor has the following layer sequence: (a) an n-conducing a-Si:H layer, (b) a first intrinsically conducing a-Si:H layer, (c) a p-conducting a-Si:H layer, (d) a second intrinsically conducting a-Si:H layer comprising a first component layer with a higher Tau product and a second component layer with a lower Tau product in comparison with the first component layer, (e) an n-conducting a-Si:H layer.
15. An optical sensor according to claim 1 , wherein said optical sensor has the following layer sequence: (a) a p-conducting a-Si:H layer, (b) a first intrinsically conducing a-Si:H layer, (c) an n-conducting a-Si:H layer, (d) a second intrinsically conducting a-Si:H layer, comprising a first component layer with a higher -Tau product and a second component layer with a lower -Tau product in comparison with the first component layer, (e) a p-conducting a-Si:H layer.
16. An optical sensor according to claim 1 , comprising the following layer sequence: (a) a p-conducting a-Si:H layer, (b) an intrinsically conducting a-Si:H layer, comprising three component layers (I, II, III) having different dielectric constants, where component layers of a low dielectric constant always precede component layers having a higher dielectric constant in the direction of incidence of light, (c) an n-conducing a-Si:H layer.
17. An optical sensor according to claim 1 comprising the following layer sequence: (a) a p-conducting a-Si:H layer (b) an intrinsically conducting a-Si:H layer, comprising three component layers having different dielectric constants, where component layers of a low dielectric constant always precede component layers having a higher dielectric constant in the direction of incidence of light, (c) a p-conducting a-Si:H layer.
18. An optical sensor according to claim 14 , wherein the layer sequence is deposited on the surface of an integrated circuit.
19. An optical sensor according to claim 18 , wherein the integrated circuit is an ASIC.
20. An optical sensor according to claim 1 , wherein each storage device is a capacitor.
21. An optical sensor according to claim 14 , wherein each storage device is a capacitor.
22. An optical sensor according to claim 21 , wherein the capacitor is arranged laterally in the layer sequence.
23. An optical sensor according to claim 21 , wherein the capacitor is arranged vertically in the layer sequence.
24. An optical sensor according to claim 1 , wherein the sensor receives radiation by means of a short-term lighting system.
25. An optical sensor according to claim 24 , wherein the short-term lighting system is a flash having a constant light intensity during its burning time.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 28, 2000
February 11, 2003
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