There is provided a semiconductor device using a TFT structure of high reliability.A gate electrode of a TFT includes a first conductive layer, a second conductive layer, and a third conductive layer. An LDD region has a part which overlaps the gate electrode via a gate insulating film and a part which does not overlap the gate electrode. As a result, this can prevent the deterioration when the TFT is on and can reduce a leakage current when the TFT is off.
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May 17, 2001
May 6, 2003
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