Two overlapped semiconductor materials are welded by a melt welding under the influence of a heat source of high energy density. The energy output of the heat source is ramped up slowly at the beginning of welding and ramped down slowly at completion of welding. In one embodiment the semiconductor materials are preheated before welding. In another embodiment, the effective position of the heat source on the semiconductor materials is periodically deflected.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for welding semiconductor materials comprising: positioning first and second semiconductor materials to be welded in proximity with each other; reducing an atmospheric pressure surrounding said first and second semiconductor materials to less than or equal to 0.05 Torr; and applying heat from a heat source of high energy density to perform melt welding of said semiconductor materials.
2. The welding method for semiconductor materials according to claim 1 , wherein said first and second semiconductor materials are one of silicon, gallium and arsenic.
3. The welding method for semiconductor materials according to claim 1 , wherein said heat source of high energy density is one of an electron beam, a laser beam, a plasma-arc and an arc.
4. The welding method for semiconductor materials according to claim 1 , further comprising: raising an energy output of said heat source to a final value over a time at a beginning of welding; and decrementing said energy output over a time at a termination of welding.
5. The welding method for semiconductor materials according to claim 4 , further comprising preheating said first and second semiconductor materials to a predetermined temperature before beginning said welding.
6. The welding method for semiconductor materials according to claim 5 , wherein said predetermined temperature is not less than 300 C.
7. The welding method for semiconductor materials according to claim 5 , wherein said predetermined temperature is not less than 600 C.
8. The welding method for semiconductor materials according to claim 1 , further comprising adding a filler element of a material identical with the semiconductor material during the step of applying heat.
9. The welding method for semiconductor materials according to claim 1 , further comprising periodically deflecting a position of said heat source on said first and second semiconductor material during said welding.
10. A method for welding first and second members of a semiconductor material comprising: positioning said first and second members adjacent each other with surfaces to be welded facing each other; preheating said first and second members to a preheat temperature of at least 300 C; applying a heat source of high energy density to said surfaces; the step of applying including increasing an energy output of said heat source over a first period at a beginning of said welding; the step of applying further including decreasing said energy output over a second period at an end of said welding; and periodically moving a contact point of said heat source on said first and second members during welding.
11. A method according to claim 10 , wherein said preheat temperature is at least 600 C.
12. A method according to claim 10 , wherein said first period is at least 15 seconds.
13. A method according to claim 10 , wherein said second period is at least 15 seconds.
14. A method according to claim 10 wherein said first and second periods are both at least 15 seconds.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 18, 1998
June 3, 2003
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