Patentable/Patents/US-6577549
US-6577549

Write current compensation for temperature variations in memory arrays

PublishedJune 10, 2003
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

A memory device includes a memory array having a substrate, an array of memory cells disposed over the substrate, row conductors coupled to the memory cells, and column conductors coupled to the memory cells. The memory device also includes current sources that generate variable write currents in response to temperature changes in the memory array. The variable write currents are generated to accommodate the change in coercivities of the memory cells as the temperature of the array changes. A current source can include a temperature sensor that provides a continuous, immediate output to the current sensor to ensure accurate adjustment of a write current generated by the current source. There is no need to halt operation of the memory device to calibrate the current source. In addition, the current source provides an accurate adjustment to the write current because the temperature used by the temperature sensor to generate the output may be taken contemporaneously with generation of the write current.

Patent Claims
6 claims

Legal claims defining the scope of protection, as filed with the USPTO.

1

1. A method of generating a write current in a memory device, the memory device comprising an array of memory cells, a plurality of first conductors coupled to the memory cells, a plurality of second conductors coupled to the memory cells, and at least one current source having at least one temperature sensor, the method comprising: enabling a write current to flow to one of the first conductors; receiving an output from the temperature sensor in the current source; and generating the write current using the output from the temperature sensor.

2

2. The method of claim 1 , wherein the step of receiving an output from the temperature sensor comprises: receiving a voltage of the temperature sensor at a control element of the current source.

3

3. The method of claim 2 , wherein the step of generating the write current comprises: adjusting a reference current according to the voltage of the temperature sensor, wherein the write current varies according to the reference current.

4

4. The method of claim 1 , wherein the step of generating the write current comprises: adjusting the write current while the write current is generated.

5

5. The method of claim 4 , comprising: applying a voltage to the temperature sensor, wherein the temperature sensor comprises a plurality of active elements.

6

6. The method of claim 4 , wherein the step of receiving an output from the temperature sensor comprises: receiving the output while the write current is generated.

Classification Codes (CPC)

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Patent Metadata

Filing Date

September 25, 2002

Publication Date

June 10, 2003

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Cite as: Patentable. “Write current compensation for temperature variations in memory arrays” (US-6577549). https://patentable.app/patents/US-6577549

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