Method of forming a metal oxide semiconductor transistor with self-aligned channel implant

1. A method of forming an integrated circuit, comprising the steps of: forming a gate insulator; forming a gate conductor relative to the gate insulator such that the gate insulator separates the gate conductor from a semiconductor material having a first conductivity type; forming a drain region having the first conductivity type; performing an angular implant to form an angular implanted region having a second conductivity type complementary of the first conductivity type and having an angular implanted region edge underlying the gate conductor; forming a source region formed within the angular implanted region; and wherein the steps of performing an angular implant and forming a source region define a transistor channel between an edge of the source region proximate the gate conductor and the angular implanted region edge underlying the gate conductor.

2. The method of claim 1 wherein the edge of the source region proximate the gate conductor is self-aligned with respect to the gate conductor.

3. The method of claim 2 wherein the angular implanted region edge underlying the gate conductor is self-aligned with respect to the gate conductor.

4. The method of claim 3 wherein the semiconductor material having a first conductivity type comprises a semiconductor material having an n-type.

5. The method of claim 4 wherein the semiconductor material comprises an n-well formed in a p-type semiconductor substrate.

6. The method of claim 5 and further comprising: forming a gate insulator separating at least a portion of the gate conductor from the semiconductor material; and forming an insulating region proximate one edge of the gate conductor; and wherein the drain region has a first edge abutting the insulating region and a second edge extending away from the insulating region and the gate conductor.

7. The method of claim 6 wherein the drain region has a higher dopant concentration than the semiconductor material.