On a rectangle-shaped insulation substrate (1) on which a pair of electrodes (2) and (3) are provided, a light emitting element chip (4) having an n-side electrode (41) and a p-side electrode (42) connected to the pair of electrodes respectively is provided. Then, the periphery of the light emitting element chip is covered with the light transmitting member (6), and a light reflection member (7) covering at least a portion of the light transmitting member is provided so that light is radiated from a portion of the light transmitting member which is not covered and exposed. A light reflection member is provided in such a manner that the portion of the light transmitting member is not covered is exposed over from a one side (A) to at least a part of the side portions (B) and (C) on both sides connected to the side portion (A). As a consequence, the directivity is widened with the result that the dark is hardly generated between the light sources which can be used as backlight even when the light sources are arranged in a large interval.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A chip-type semiconductor light emitting device comprising: an insulation substrate having a rectangle shaped plane on which a pair of electrodes are provided; a light emitting diode chip provided on said insulation substrate, said chip having an n-side electrode and a p-side electrode connected to said pair of electrodes respectively; a light transmitting member being provided on said insulation substrate and covering the periphery of said light emitting diode chip; and a light reflection member covering at least part of said light transmitting member, said light refection member being provided so as to radiate light from a portion of said light transmitting member which is not covered and which is exposed, wherein said light reflection member is formed in such a manner that said portion of said light transmitting member is exposed over from one side in said rectangle shape to at least a part of side portions on both sides which continue to said one side, and said light transmitting member is disposed in a space defined by said light reflection member and said insulation substrate.
2. The semiconductor light emitting device of claim 1 , wherein at least one of said n-side electrode and p-side electrode of said light emitting diode chip is connected to one of said pair of electrodes provided on said insulation substrate by the wire bonding, and a wire in said wire bonding is bonded in a direction approximately parallel to said one side.
3. The semiconductor light emitting device of claim 1 , wherein a boundary between said one side and said side portions has an arc-like shape in a plane shape.
4. The semiconductor light emitting device of claim 1 , wherein said light transmitting member is made of a material having a light scattering function.
5. The semiconductor light emitting device of claim 4 , wherein a boundary portion between said one side and said side portions has a square shape in a plane shape.
6. The semiconductor light emitting device of claim 1 , wherein a pair of rear electrodes are formed on a rear surface of said insulation substrate and are electrically connected respectively to said pair of electrodes provided on a surface of said insulation substrate via a through hole provided on said insulation substrate, and said surface side of said through hole is sealed with said pair of electrodes respectively which are provided on said surface of said insulation substrate.
7. The semiconductor light emitting device of claim 1 , wherein said reflection member is formed in such a manner that said member is bent to a back side from an upper surface, and a section form is an L-shape.
8. The semiconductor light emitting device of claim 1 , wherein a back side wall of said light reflection member which is a side wall opposite to said one side is formed in a concave shape.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 27, 2000
September 30, 2003
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