Semiconductor devices

1. A plastics-encapsulated semiconductor device comprising a semiconductor device body that has bond pads of aluminium at a surface of the device body, and connection wires of aluminium that are bonded between the bond pads and electrical terminal areas of the device, the device body and connection wires being located inside a plastics encapsulation, wherein a sacrificial additional wire is bonded to a bond pad and/or terminal area in a potential moisture area within the encapsulation, the connection wires are of aluminium alloyed with another element that renders the connection wires more resistant to corrosion by moisture than is the sacrificial additional wire, and the sacrificial additional wire is of a purer aluminium material that serves as a corrodible getter of the moisture within the encapsulation.

2. A device as claimed in claim 1 , wherein the sacrificial additional wire is bonded to a bond pad of a main current path through the device body.

3. A device as claimed in claim 1 , wherein the sacrificial additional wire is bonded in parallel with a connection wire, between the same bond pad and same electrical terminal area as the connection wire.

4. A device as claimed in claim 3 , wherein the sacrificial additional wire has a smaller width than the parallel connection wire.

5. A device as claimed in claim 1 , wherein the sacrificial additional wire is bonded in a loop on a common bond pad and/or terminal area.

6. A device as claimed in claim 5 , wherein the sacrificial additional wire is bonded in a loop to an electrically conductive mount on which the device body is mounted.

7. A device as claimed in claim 1 , wherein the sacrificial additional wire is ball-bonded to the bond pad and/or terminal area and is severed in the vicinity of the ball bond to form a ball stump.

8. A device as claimed in claim 1 , wherein the sacrificial additional wire is at least 99.99% pure aluminium.

9. A device as claimed in claim 1 , wherein the sacrificial additional wire has a width of more than 75 micrometers.

10. A device as claimed in claim 1 , wherein the connection wires are of aluminium doped with nickel.

11. A device as claimed in claim 1 , wherein the bond pads are of an aluminium alloy.

12. A plastics-encapsulated semiconductor device, comprising: a semiconductor body having a surface; a plurality of aluminum bond pads positioned on the surface; aluminum connection wires bonded between the bond pads and electrical terminal areas of the semiconductor device, wherein the semiconductor body and the connection wires are positioned within a plastic encapsulation; and a sacrificial additional wire bonded to at least one of a bond pad or a terminal area in a potential moisture area within the encapsulation, wherein the connection wires are of aluminum alloyed with another element that renders the connection wires more resistant to corrosion by moisture than the sacrificial additional wire, and wherein the sacrificial additional wire is of a purer aluminum material than the connection wires and serves as a corrodible getter of moisture within the encapsulation.