A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (AlxGa1−x)1−YInyN (0≦x≦1, 0≦y≦1) layered in order on a ground layer (Alx′Ga1−x′)1−y′Iny′N (0≦x′≦1, 0≦y′≦1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A nitride semiconductor laser device comprising: a ground layer made of group III nitride semiconductor (Al x Ga 1 x ) 1 y In y N (0 x 1, 0 y 1); a laser body including a plurality of crystal layers each made of group III nitride semiconductor (Al x Ga 1 x ) 1 y In y N (0 x 1, 0 y 1) successively grown on the ground layer, the laser body further including a narrowed current path to provide electric current to a light emitting portion of the crystal layers; a cleavable support substrate bonded after growth of the crystal layers onto a surface of the laser body where the narrowed current path is disposed, wherein the cleavable support substrate has a cleavage plane coinciding with a cleavage plane of the crystal layers of the nitride semiconductor and wherein the cleavable support substrate is made of an electrically conductive material; and at least one bonding film, via which the cleavable support substrate and the laser body are bonded, including a portion of the narrowed current.
2. A nitride semiconductor laser device according to claim 1 , wherein the device further comprises a heat sink bonded onto the ground layer.
3. A nitride semiconductor laser device according to claim 1 , wherein the device further comprises a heat sink bonded onto the cleavable support substrate.
4. A nitride semiconductor laser device according to claim 1 , wherein the device further comprises a waveguide extending along a direction normal to a cleavage plane of the nitride semiconductor.
5. A nitride semiconductor laser device according to claim 1 , wherein the cleavable support substrate is made of a semiconductor single-crystal material.
6. A nitride semiconductor laser device according to claim 5 , wherein the semiconductor single-crystal material is selected from a group consisting of GaAs, InP and Si.
7. A nitride semiconductor laser according to claim 1 , wherein the narrowed current path includes a conductive stripe extending along a direction normal to the cleavage plane of the nitride semiconductor.
8. A nitride semiconductor laser device according to claim 1 , wherein the bonding film comprising a metal film.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 9, 2000
March 23, 2004
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