A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single crystal substrate is a {111} crystal plane inclined at an angle of 5.0° to 9.0° toward a <110> crystal azimuth.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A semiconductor device comprising a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate, wherein the surface of the silicon single crystal substrate is a 111 crystal plane inclined at an angle of 5.0 to 9.0 toward a <110> crystal azimuth.
2. The semiconductor device according to claim 1 , wherein the surface of the silicon single crystal substrate is inclined at an angle of 7.3 0.5 toward the <110> crystal azimuth.
3. The semiconductor device according to claim 1 , further comprising a low-temperature buffer layer composed of a boron phosphide base semiconductor layer between the silicon single crystal substrate and boron phosphide semiconductor layer.
4. The semiconductor device according to claim 2 , further comprising a low-temperature buffer layer composed of a boron phosphide base semiconductor layer between the silicon single crystal substrate and boron phosphide semiconductor layer.
5. A light emitting device comprising the semiconductor device according to claim 1 .
6. A light emitting device comprising the semiconductor device according to claim 2 .
7. A transistor comprising the semiconductor device according to claim 1 .
8. A transistor comprising the semiconductor device according to claim 2 .
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 10, 2002
May 4, 2004
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.