A solid-state imaging apparatus includes a photoelectric conversion pixel having a photoelectric conversion device and an amplifier circuit for amplifying a signal supplied from the photoelectric conversion device. A voltage supply circuit supplies a reset voltage at least to the photoelectric conversion pixel. Thus, the fixed pattern noise generated by variations in the gain of the individual pixels and variations of the threshold is suppressed, and changes of the fixed pattern noise caused by the operating conditions of the solid-state imaging apparatus are also prevented.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A solid-state imaging apparatus comprising: a photoelectric conversion pixel including a photoelectric conversion device and first amplifying means for amplifying a signal supplied from said photoelectric conversion device; and voltage supply means including second amplifying means for supplying a reset voltage at least to said photoelectric conversion pixel, wherein said second amplifying means has a circuit structure similar to a circuit structure of said first amplifying means, wherein said voltage supply means outputs a voltage from a node at which an input portion and an output portion of said second amplifying means are connected.
2. A solid-state imaging apparatus according to claim 1 , wherein said photoelectric conversion device of said photoelectric conversion pixel is a photodiode, and said photoelectric conversion pixel comprises a transistor for storing a light signal charge, for converting a voltage of the charge, and for outputting the converted charge, a selection switch used for performing the voltage conversion and the voltage output, and a resetting transistor for resetting said photodiode and said transistor.
3. A solid-state imaging apparatus comprising: a photoelectric conversion pixel including a photoelectric conversion device and first amplifying means for amplifying a signal supplied from said photoelectric conversion device; and voltage supply means including second amplifying means for supplying a reset voltage at least to said photoelectric conversion pixel, wherein said second amplifying means has a circuit structure similar to a circuit structure of said first amplifying means, wherein said voltage supply means comprises a transistor for converting a voltage and outputting the converted voltage, a selection switch used for the voltage conversion and the voltage output, and a current-load transistor that forms, together with said transistor, an inversion amplifier.
4. A solid-state imaging apparatus comprising: a photoelectric conversion pixel including a photoelectric conversion device and first amplifying means for amplifying a signal supplied from said photoelectric conversion device; voltage supply means including second amplifying means for supplying a reset voltage at least to said photoelectric conversion pixel, wherein said second amplifying means has a circuit structure similar to a circuit structure of said first amplifying means; and a first operational amplifier, which is a voltage follower, at a stage subsequent to an output terminal of said voltage supply means.
5. A solid-state imaging apparatus according to claim 4 , wherein said voltage supply means further comprises an operational amplifier, which is a voltage follower.
6. A solid-stage imaging apparatus according to claim 4 , wherein a plurality of said voltage supply means are provided.
7. A solid-state imaging apparatus according to claim 4 , wherein said voltage supply means further comprises a second operational amplifier for receiving inputs from said first operational amplifier and a first source follower, and for outputting a voltage to a second source follower, said second source follower outputting said reset voltage.
8. A solid-stage imaging apparatus comprising: a photoelectric conversion pixel including a photoelectric conversion device; and a voltage supply circuit for supplying a reset voltage used for resetting said photoelectric conversion pixel, said reset voltage being supplied from a node at which a control electrode portion of a transistor and an output portion of said transistor are connected, said transistor being configured similarly to a transistor in said photoelectric conversion pixel.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 21, 1999
May 4, 2004
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