After forming an insulating film on an underlying layer, a resist pattern is formed on the insulating film. The insulating film is etched by using the resist pattern as a mask, thereby forming an insulating film pattern. Without removing the resist pattern, exposed portions of the underlying layer and the insulating film pattern are subjected to a plasma treatment, cleaning, a heat treatment or the like, so that a deposition grown during the formation of the insulating film pattern can be removed. Thereafter, the underlying layer is etched by using at least the insulating film pattern as a mask. As a result, even when a strict pattern rule is employed, pattern defects can be prevented from being caused in etching a multi-layer film.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing an electronic device comprising the steps of: (a) forming, on an underlying layer, an insulating film made from one of an oxide film, a nitride film, an oxide nitride film, an organic film and an organic-inorganic hybrid film; (b) forming a resist pattern on said insulating film; (c) forming an insulating film pattern by etching said insulating film with said resist pattern used as a mask; (d) conducting a plasma treatment on exposed portions of said underlying layer and said insulating film pattern without removing said resist pattern after the step (c); and (e) forming a pattern for said underlying layer by etching said underlying layer with said resist pattern and said insulating film pattern used as a mask after the step (d).
2. The method of manufacturing an electronic device of claim 1 , wherein said plasma treatment is conducted by using a gas including at least one of a N 2 gas, an O 2 gas and an inert gas in the step (d).
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 14, 2002
June 15, 2004
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