A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for processing a substrate, comprising: depositing a barrier layer on the substrate by introducing a processing gas comprising an organosilicon compound into a processing chamber, wherein the organosilicon compound has the formula SiH a (CH 3 ) b (C 6 H 5 ) c , wherein a is 1 or 2, b is 1 or 2, and c is 1 or 2, and reacting the processing gas to deposit the barrier layer, wherein the barrier layer has a dielectric constant less than 4; and depositing a dielectric layer adjacent the barrier layer, wherein the first dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
2. The method of claim 1 , wherein the first dielectric layer has a carbon content between about 5 and about 30 atomic percent excluding hydrogen atoms.
3. The method of claim 2 , wherein the first dielectric layer is deposited by oxidizing an organosiliane or organosiloxane compound in a plasma enhanced chemical vapor deposition technique.
4. The method of claim 1 , wherein the barrier layer is deposited under plasma conditions comprising maintaining a substrate temperature between about 0 C. and about 500 C., maintaining a chamber pressure below about 500 Torr, and applying an RF power of between about 0.03 watts/cm 2 and about 1500 watts/cm 2 .
5. The method of claim 1 , wherein the barrier layer is treated with a plasma of an inert gas, a reducing gas, or combinations thereof, prior to depositing the first dielectric layer.
6. The method of claim 1 , further comprising depositing an etch stop layer on the first dielectric layer by reacting an organosilicon compound having the formula SiH a (CH 3 ) b (C 6 H 5 ) c , wherein a is 1 or 2, b is 1 or 2, and c is 1 or 2.
7. The method of claim 1 , wherein the organosilicon compound comprises diphenylmethylsilane, dimethylphenylsilane, or combinations thereof.
8. The method of claim 1 , wherein the processing gas further includes a dopant component selected from the group of an oxygen-containing compound, a nitrogen-containing compound, a boron-containing compound, a phosphorus-containing compound, and combinations thereof.
9. The method of claim 8 , wherein the oxygen-containing compound is selected from the group of oxygen, ozone, a siloxane, and combinations thereof.
10. The method of claim 8 , wherein the nitrogen-containing compound is selected from the group of nitrogen gas, ammonia, a silazane, and combinations thereof.
11. The method of claim 1 , wherein the processing gas further comprises an inert gas selected from the group of argon, helium, neon, xenon, or krypton, and combinations thereof.
12. The method of claim 9 , wherein the barrier layer comprises less than about 15 atomic percent of oxygen.
13. A method for processing a substrate, comprising: depositing a barrier layer on the substrate by introducing a processing gas comprising an organosilicon compound into a processing chamber, wherein the organosilicon compound has the formula SiH a (CH 3 ) b (C 6 H 5 ) c , wherein a is 1 or 2, b is 1 or 2, and c is 1 or 2, and an oxygen-containing compound, a nitrogen-containing compound, or combinations thereof, and generating a plasma to deposit the barrier layer, wherein the barrier layer has a dielectric constant of less than 4; and depositing a first dielectric layer adjacent the barrier layer, wherein the first dielectric layer has a dielectric constant less than 4.
14. The method of claim 13 , wherein the first dielectric layer comprises silicon, oxygen, and carbon, has a dielectric constant of about 3 or less, and has a carbon content between about 5 and about 30 atomic percent excluding hydrogen atoms.
15. The method of claim 13 , wherein the first dielectric layer is deposited by oxidizing an organosiliane compound in a plasma enhanced chemical vapor deposition technique.
16. The method of claim 13 , wherein the plasma is generated under conditions comprising maintaining a substrate temperature between about 0 C. and about 500 C., maintaining a chamber pressure below about 500 Torr, and applying an RF power of between about 0.03 watts/cm 2 and about 1500 watts/cm 2 .
17. The method of claim 13 , wherein the barrier layer is treated with a plasma of an inert gas, a reducing gas, or combinations thereof, prior to depositing the first dielectric layer.
18. The method of claim 13 , further comprising depositing an etch stop layer on the first dielectric layer by reacting an organosilicon compound having the formula SiH a (CH 3 ) b (C 6 H 5 ) c , wherein a is 1 or 2, b is 1 or 2, and c is 1 or 2.
19. The method of claim 13 , wherein the organosilicon compound comprises diphenylmethylsilane, dimethylphenylsilane, or combinations thereof.
20. The method of claim 13 , wherein oxygen-containing compound is selected from the group of oxygen, ozone, a siloxane, and combinations thereof, and the nitrogen-containing compound is selected from the group of nitrogen gas, ammonia, a silazane, and combinations thereof.
21. The method of claim 13 , wherein the processing gas further includes a dopant component selected from the group of a boron-containing compound, a phosphorus-containing compound, and combinations thereof.
22. The method of claim 13 , wherein the processing gas further comprises an inert gas selected from the group of argon, helium, neon, xenon, or krypton, and combinations thereof.
23. The method of claim 13 , wherein the barrier layer comprises less than about 15 atomic percent of oxygen.
24. The method of claim 1 , wherein the organosilicon compound is diphenylmethylsilane and barrier layer has a leakage current between about 3e 9 amps/cm 2 and about 4e 8 amps/cm 2 at between 1 MV/cm and 2 MV/cm.
25. The method of claim 1 , wherein the organosilicon compound is dimethylphenylsilane and barrier layer has a leakage current between about 1e 9 amps/cm 2 and about 2e 8 amps/cm 2 at between 1 MV/cm and 2 MV/cm.
26. The method of claim 6 , further comprising depositing a second dielectric layer on the etch stop layer.
27. The method of claim 18 , further comprising depositing a second dielectric layer on the etch stop layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 13, 2001
July 6, 2004
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