The present application provides a magneto-resistive element excellent in symmetry of playback waveforms. The basic construction of the present application is as follows. That is, a magnetic layer 13, an insulating layer 14, and a magnetic layer 15 are laminated; a power supply 18 for applying a voltage between two magnetic layers is provided; an anti-ferromagnetic layer 16 is laminated on the magnetic layer 15, direction of which magnetization is substantially parallel or counter-parallel with a detecting direction of an external magnetic field, and when the external magnetic field is not present, a power supply 17 for causing a current to flow in a non-magnetic metal layer 12 and in an inner direction of a layer surface thereof is provided so that a direction of magnetization of the magnetic layer 13 is substantially at right angles to the detecting direction of the external magnetic field; and there is provided a signal detector 19 for detecting a change of current tunneling through an insulating layer when the direction of magnetization of the magnetic layer 13 is changed by the external magnetic field.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A magnetic head having a magneto-resistive element, said magneto-resistive element comprising: a substrate, a multi-layer having a first magnetic layer, a first insulating layer, a second magnetic layer, a second insulating layer, and a third magnetic layer laminated on said substrate in that order, a voltage supplier applying a voltage between the first magnetic layer and the third magnetic layer; a direction of magnetization of one of a set of the first and third magnetic layers and the second magnetic layer being substantially parallel or counter-parallel with a detecting direction of an external magnetic field; and a controller making a direction of magnetization of the other of the set of the first and third magnetic layers and the second magnetic layer being substantially perpendicular to the detecting direction of the external magnetic field when the external magnetic field is not present; and a detector detecting, when the direction of magnetization of the other of the set of the first and third magnetic layers and the second magnetic layer is changed by the external magnetic field, a change of a current tunneling through the first and second insulating layers caused thereby, wherein a coercive force of said set of first and third magnetic layers is higher than that of the second magnetic layer, and said controller is a controller causing a current to flow in a non-magnetic metal layer laminated on said multi-layer and in an inner direction of a layer surface of said non-magnetic metal layer.
2. A magnetic head having a magneto-resistive element, said magneto-resistive element comprising: a substrate, a multi-layer having a first magnetic layer, a first insulating layer, a second magnetic layer, a second insulating layer, and a third magnetic layer laminated on said substrate in that order, a voltage supplier applying a voltage between the first magnetic layer and the third magnetic layer; a direction of magnetization of one of a set of the first and third magnetic layers and the second magnetic layer being substantially parallel or counter-parallel with a detecting direction of an external magnetic field; and a controller making a direction of magnetization of the other of the set of the first and third magnetic layers and the second magnetic layer being substantially perpendicular to the detecting direction of the external magnetic field when the external magnetic field is not present; and a detector detecting, when the direction of magnetization of the other of the set of the first and third magnetic layers and the second magnetic layer is changed by the external magnetic field, a change of a current tunneling through the first and second insulating layers caused thereby, wherein said element has anti-ferromagnetic layers on both sides of said multi-layer, and said controller is a controller causing a current to flow in a crystal orientation control layer laminated on the side opposite to the side in which said multi-layer of one of said anti-ferromagnetic layers is formed, and parallel to a layer surface of at least one layer of said anti-ferromagnetic layers and said crystal orientation control layer.
3. A magnetic head having a magneto-resistive element, said magneto-resistive element comprising: a substrate, a multi-layer having a first magnetic layer, a first insulating layer, a second magnetic layer, a second insulating layer, and a third magnetic layer laminated on said substrate in that order, a voltage supplier applying a voltage between the first magnetic layer and the third magnetic layer; a direction of magnetization of one of a set of the first and third magnetic layers and the second magnetic layer being substantially parallel or counter-parallel with a detecting direction of an external magnetic field; a controller making a direction of magnetization of the other of the set of the first and third magnetic layers and the second magnetic layer being substantially perpendicular to the detecting direction of the external magnetic field when the external magnetic field is not present; and a detector detecting, when the direction of magnetization of the other of the set of the first and third magnetic layers and the second magnetic layer is changed by the external magnetic field, a change of a current tunneling through the first and second insulating layers caused thereby, wherein a coercive force of the second magnetic layer is higher than that of said set of first and third magnetic layers, and said controller is a controller causing a current to flow in a non-magnetic metal layer laminated on said multi-layer and in an inner direction of a layer surface of said non-magnetic metal layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 7, 2002
August 3, 2004
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