A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A process for forming substrates, said process comprising: providing a substrate having a stressed region along a first plane associated with the substrate and an implanted region along a second plane associated with a depth within the substrate, the substrate having a surface region; bonding the surface region of the substrate to a handle substrate; using a controlled cleaving action to initiate a cleave along the depth of the substrate; and propagating a cleave front to free a portion of said substrate.
2. The method of claim 1 wherein the stressed region comprises either a tensile characteristic or a compressive characteristic.
3. The method of claim 1 wherein the stressed region comprises silicon alloy.
4. The method of claim 1 wherein the stressed region comprises silicon germanium.
5. The method of claim 1 wherein the stressed region comprises silicon germanium carbon.
6. The method of claim 1 wherein the stressed region comprises epitaxial silicon.
7. The method of claim 1 wherein the stressed region comprises undoped epitaxial silicon.
8. The method of claim 1 wherein the stressed region is multilayered.
9. The method of claim 1 wherein the implanted region comprises hydrogen particles.
10. The method of claim 1 wherein the implanted region comprises helium particles.
11. The method of claim 1 wherein the implanted region comprises boron.
12. The method of claim 1 wherein the bonding is provided by an adhesive layer.
13. The method of claim 1 wherein the bonding is provided by a plastic material.
14. The method of claim 1 wherein the bonding is provided by a polyimide based material.
15. The method of claim 1 wherein the bonding is provided by a silicon dioxide layer.
16. The method of claim 1 wherein the bonding is provided by a spin on glass layer.
17. The method of claim 1 wherein the bonding is provided by a siloxane material.
18. The method of claim 1 wherein the bonding is provided by a silicate material.
19. The method of claim 1 wherein the bonding is provided by a plasma cleaning process.
20. The method of claim 19 wherein the plasma cleaning process is provided to activate the surface region of the substrate.
21. The method of claim 1 wherein the substrate comprises a silicon material.
22. The method of claim 1 wherein in the substrate comprises a gallium material.
23. The method of claim 1 wherein the substrate comprises a gallium arsenide.
24. The method of claim 1 wherein the substrate comprises a gallium nitride.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
October 9, 2002
September 14, 2004
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