A physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a physical vapor deposition target includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A physical vapor deposition target includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. In one implementation, a conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from less than 1.0 at % to 0.001 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and silver, with the silver being present in the alloy at from 50 at % to 70 at %. A conductive integrated circuit metal alloy interconnection includes an alloy of copper and tin, with tin being present in the alloy at from less than 1.0 at % to 0.001 at %. Other useable copper alloys include an alloy of copper and one or more other elements, the one or more other elements being present in the alloy at a total concentration from less than 1.0 at % to 0.001 at % and being selected from the group consisting of Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ti, Zr, Hf, Zn, Cd, B, Ga, In, C, Se, Te, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Ru, Os, Co, Rh, Ni, Pd, Pt, Au, Tl, and Pb. An electroplating anode is formed to comprise one or more of the above alloys.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A physical vapor deposition target made of a copper alloy consisting of copper and one or more other elements, the one or more other elements being present in the alloy at a total concentration from less than 1.0 at % to 0.001 at % and consisting of Tc and optionally one or more member selected from the group consisting of Mo, Re, and Tl.
2. The physical vapor deposition target of claim 1 wherein the one or more other elements are present in the alloy at a total concentration at from 0.005 at % to 0.1 at %.
3. The physical vapor deposition target of claim 1 comprising an RF sputtering coil.
4. The physical vapor deposition target of claim 1 wherein the one or more elements includes Mo.
5. The physical vapor deposition target of claim 1 wherein the one or more elements includes at least two elements.
6. The physical vapor deposition target of claim 1 wherein the one or more elements includes Re.
7. The physical vapor deposition target of claim 1 wherein the one or more elements includes Tl.
8. The physical vapor deposition target of claim 1 wherein the one or more elements form elemental precipitates in the alloy microstructure.
9. The physical vapor deposition target of claim 1 wherein the average grain size is less than or equal to about 20 micrometers.
10. A physical vapor deposition target made of a copper alloy consisting of copper having a purity of 99.9998% and one or more other elements, the one or more other elements being present in the alloy at a total concentration from less than 1.0 at % to 0.001 at % and consisting of Tc and optionally one or more member selected from the group consisting of Mo, Re, Tl.
11. The physical vapor deposition target of claim 10 wherein the copper alloy comprises an average grain size and comprises an electromigration resistance higher than the electromagination resistance of copper having a purity of greater than 99.999% of the same average grain size.
12. The physical vapor deposition target of claim 10 wherein the copper alloy comprises an average grain size and comprises a thermal stability to grain size retention that is higher than the thermal stability to grain size retention of copper having a purity of greater than 99.999% of the same average grain size.
13. The physical vapor deposition target of claim 10 comprising three or fewer of the other elements.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 14, 2001
September 28, 2004
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