A method is proposed for producing semiconductor components, in which at least one doped region is introduced in a wafer, a solid glass layer provided with dopant being applied on at least one of the two sides of a semiconductor wafer, in another step, the wafer being heated to high temperatures so that the dopant from the glass layer penetrates deep into the wafer to produce the at least one doped region; and in a further step, the glass layer being removed. The method is used for producing homogeneous, heavily doped regions, it also being possible to introduce these regions in the wafer on both sides and for the regions to be of different doping type.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for producing a semiconductor component in which at least one doped region is introduced into a semiconductor wafer, comprising the steps of: applying a solid glass layer both on the front side of the semiconductor wafer and on the back side of the semiconductor wafer, a doping type of the dopant on the back side being opposite compared to the doping type of the dopant on the front side; heating the semiconductor wafer to a high temperature of at least 1200 degrees centigrade while the glass layer is applied so that the dopant from the solid glass layer penetrates into the semiconductor wafer to produce the at least one doped region; applying a neutral glass layer on the solid glass layers prior to heating the semiconductor wafer; removing the neutral glass layers together with the solid glass layers after heating the semiconductor wafer; and providing the dopant at a dosage of at least 10 17 /cm 2 in the at least one doped region; wherein the step of applying the solid glass layer is performed in accordance with a chemical vapor deposition at atmospheric pressure.
2. The method according to claim 1 , wherein: the step of heating the semiconductor wafer is performed in an oxidizing atmosphere.
3. The method according to claim 1 , further comprising the step of: maintaining the high temperature for about 20 to 30 hours.
4. The method according to claim 1 , further comprising the step of: maintaining the high temperature for 21 hours.
5. The method according to claim 1 , wherein: the solid glass layer has a dopant constituent of greater than 2 percentage by weight.
6. The method according to claim 1 , wherein: the solid glass layer has a dopant constituent of about 3 to 6 percentage by weight.
7. The method according to claim 1 , wherein: the solid glass layer has a thickness of about 2 micrometers.
8. The method according to claim 1 , wherein: the neutral glass layer has a thickness of about 0.5 micrometers.
9. The method according to claim 1 , wherein: the step of removing the solid glass layer is performed in accordance with hydrofluoric acid.
10. The method according to claim 1 , wherein the high temperature is between 1200 and 1280 degrees centigrade.
11. A method for producing a semiconductor component in which at least one doped region is introduced into a semiconductor wafer, comprising: applying a solid glass layer provided with a dopant on both sides of the semiconductor wafer; heating the semiconductor wafer to a high temperature of at least 1200 degrees centigrade while the glass layer is applied so that the dopant from the solid glass layer penetrates into the semiconductor wafer to produce the at least one doped region; applying a neutral glass layers on the solid glass layer prior to heating the semiconductor wafer; removing the neutral glass layers together with the solid glass layers after heating the semiconductor wafer; and providing the dopant at a dosage of at least 10 17 /cm 2 in the at least one doped region; wherein the solid glass layer is applied using chemical vapor deposition at atmospheric pressure; and wherein the dopant constituent of the solid glass layer on a front side of the semiconductor wafer is different from the dopant constituent of the solid glass layer on a back side of the semiconductor wafer.
12. The method of claim 1 , wherein silane gas and B 2 H 6 gas is used in the chemical vapor deposition to generate silicon dioxide and p-type dopants.
13. The method of claim 1 , wherein silane PH 3 gas is used in the chemical vapor deposition to generate silicon dioxide and n-type dopants.
14. The method of claim 1 , wherein tetra-ethyl-ortho-silicate gas and trimethyl borate is used in the chemical vapor deposition to generate silicon dioxide and p-type dopants.
15. The method of claim 1 , wherein tetra-ethyl-ortho-silicate gas and trimethyl phosphate is used in the chemical vapor deposition to generate silicon dioxide and n-type dopants.
16. A method for producing a semiconductor component in which at least one doped region is introduced into a semiconductor wafer, comprising: applying a solid glass layer provided with a dopant on both sides of the semiconductor wafer; heating the semiconductor wafer to a high temperature of at least 1200 degrees centigrade while the glass layer is applied so that the dopant from the solid glass layer penetrates into the semiconductor wafer to produce the at least one doped region; applying a neutral glass layer on the solid glass layers prior to heating the semiconductor wafer; removing the neutral glass layers together with the solid glass layers after heating the semiconductor wafer; and providing the dopant at a dosage of at least 10 17 /cm 2 in the at least one doped region; wherein the dopant constituent of the solid glass layer on a front side of the semiconductor wafer is different from the dopant constituent of the solid glass layer on a back side of the semiconductor wafer and the solid glass layer is applied using a chemical vapor deposition at atmospheric pressure using a tetra-ethyl-ortho-silicate gas.
17. The method of claim 16 , wherein the neutral glass layer has a thickness of about 0.5 micrometers.
18. The method of claim 16 , wherein the high temperature is between 1200 and 1280 degrees centigrade.
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December 13, 2001
October 19, 2004
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