A microelectronic semiconductor interconnect structure barrier and method of deposition provide improved conductive barrier material properties for high-performance device interconnects. The barrier comprises a dopant selected from the group consisting of platinum, palladium, iridium, rhodium, and time. The barrier can comprises a refractory metal selected from the group consisting of tantalum, tungsten titanium, chromium, and cobalt, and can also comprise a third element selected from the group consisting of carbon, oxygen and nitrogen. The dopant and other barrier materials can be deposited by chemical-vapor deposition to achieve good step coverage and a relatively conformal thin film with a good nucleation surface for subsequent metallization such as copper metallization. In one embodiment, the barrier suppresses diffusion of copper into other layers of the device, including the inter-metal dielectric, pre-metal dielectric, and transistor structures.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method for forming a microelectronic semiconductor interconnect structure on a substrate, the interconnect structure having at least one barrier layer, the method comprising: depositing a barrier material by chemical vapor deposition, the barrier material comprising cobalt and at least one material selected from the group consisting of nitrogen, oxygen and carbon; doping the barrier material with at least one dopant to form the barrier layer, the dopant selected from the group consisting of Pt, Pd, Ir, Rh and Sn; and depositing an interconnect material by metal-organic chemical vapor deposition on at least a portion of the barrier layer.
2. The method according to claim 1 wherein the barrier material further comprises Pt.
3. The method according to claim 1 wherein the barrier material Co x Pt y .
4. The method according to claim 1 wherein the barrier material further comprises Ta x Pt y .
5. The method according to claim 1 further comprising co-depositing the at least one dopant with the barrier material by metal-organic chemical-vapor deposition.
6. A method for forming a microelectronic semiconductor interconnect structure on a substrate, the method comprising: forming a barrier layer by chemical vapor deposition on at least a portion of the substrate, the barrier layer comprising cobalt and at least one material selected from the group consisting of nitrogen, oxygen and carbon, the cobalt forming at least one adhesion region within the barrier layer; and forming a conductive layer of copper by metal-organic chemical vapor deposition on the barrier layer.
7. The method of claim 6 , further comprising co-depositing the barrier layer, the barrier layer further comprising platinum.
8. The method of claim 6 , wherein the barrier layer comprises an adhesion characteristic and an amorphic characteristic.
9. The method of claim 6 , wherein the forming comprises forming a graded barrier layer.
10. The method of claim 6 , wherein the barrier layer further comprises platinum.
11. The method of claim 6 , wherein the barrier layer further comprises tantalum.
12. A method for forming a microelectronic semiconductor interconnect structure on a substrate, the method comprising: forming a graded barrier layer including cobalt and at least one material selected from the group consisting of nitrogen, oxygen and carbon by chemical vapor deposition on the substrate, the cobalt having an adhesion characteristic; and depositing interconnect material by metal-organic chemical vapor deposition on at least a portion of the graded barrier layer, the interconnect material operable to form the interconnect structure.
13. The method of claim 12 wherein the barrier layer comprises Co x Pt y .
14. The method according to claim 12 wherein the barrier layer further comprises Ta x Pt y .
15. A method for forming a microelectronic semiconductor interconnect structure on a substrate, the method comprising: forming a barrier layer by chemical vapor deposition on the substrate, the barrier layer including cobalt, a varied concentration of at least one dopant, and at least one material selected from the group consisting of nitrogen, oxygen and carbon; and depositing an interconnect layer by metal-organic chemical vapor deposition adjacent to the barrier layer.
16. The method of claim 15 , wherein the barrier layer comprises a region having a high relative concentration of the at least one dopant, the high relative concentration operable to promote adhesion of the interconnect layer.
17. The method of claim 15 , wherein the barrier layer comprises a high relative concentration of the at least one dopant, the high relative concentration operable to promote conductivity of the barrier layer.
18. The method of claim 15 , wherein the barrier layer further comprises platinum.
19. The method of claim 15 , wherein the forming comprises co-depositing the at least one dopant with the cobalt.
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April 21, 2000
November 2, 2004
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