A semiconductor device with which a panel having a large area or a narrowly margined with the circumferential space minimized can be manufactured stably with a high yield. The semiconductor device comprises a TFT substrate having a plurality of pixels of a plurality of TFT (thin film transistors) provided on the substrate in which a peripheral wire is arranged along the outer periphery of the TFT substrate and connected to a constant potential.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A photoelectric converter device having a plurality of pixels formed on a substrate, comprising: a slice check wire for checking acceptability of a cut edge of said substrate, said slice check wire being arranged outside a region where said pixels are arranged and being disposed on a first wire layer among a plurality of wire layers, closest to said substrate, on said substrate.
2. The photoelectric converter device according to claim 1 , wherein said wire is connected to a constant electric potential.
3. The photoelectric converter device according to claim 2 , wherein said constant electric potential is the ground potential.
4. The photoelectric converter device according to claim 1 , wherein said wire has a pad section for checking electric conductivity.
5. The photoelectric converter device according to claim 1 , wherein said substrate is an insulator.
6. The photoelectric converter device according to claim 1 , wherein said pixels carry a wavelength converter thereon.
7. The photoelectric converter device according to claim 6 , wherein said wavelength converter is a fluorescent substance.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 1, 2001
November 2, 2004
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