A perpendicular exchange biased device comprises a layer of buffer material on a surface of a substrate, a layer of ferromagnetic material on a surface of the buffer layer, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material. A method of making a perpendicular exchange biased device comprising positioning a layer of buffer material on a surface of a substrate, positioning a layer of ferromagnetic material on a surface of the layer of buffer material, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and positioning a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material is also included.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A perpendicular exchange biased device comprising: a layer of buffer material on a surface of a substrate, a layer of ferromagnetic material on a surface of the buffer layer, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material; and a layer of antiferromagnetic material directly deposited on a surface of the layer of ferromagnetic material.
2. A device according to claim 1 , wherein the buffer material comprises a material selected from the group of: copper and diamond.
3. A device according to claim 2 , wherein the layer of ferromagnetic material comprises a material selected from the group of: nickel or an alloy containing nickel.
4. A device according to claim 3 , wherein the layer of antiferromagnetic material comprises a manganese-based alloy.
5. A device according to claim 4 , wherein the manganese-based alloy is selected from the group of: FeMn, RhMn, PtMn and IrMn.
6. A device according to claim 1 , wherein the buffer material comprises a (002) copper.
7. A device according to claim 1 , wherein the buffer material comprises a (001) diamond.
8. A device according to claim 1 , wherein the buffer material comprises one of: boron doped diamond or nitrogen doped diamond.
9. A method of making a perpendicular exchange biased device comprising: positioning a layer of buffer material on a surface of a substrate, positioning a layer of ferromagnetic material on a surface of the layer of buffer material, wherein the magnetization of the ferromagnetic layer lies in a direction peipendicular to the plane of the layer of ferromagnetic material; and directly depositing a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material.
10. The method of claim 9 , wherein the buffer material comprises a material selected from the group of: copper and diamond.
11. The method of claim 10 , wherein the layer of ferromagnetic material comprises a material selected from the group of: nickel or an alloy containing nickel.
12. The method of claim 11 , wherein the layer of antiferromagnetic material comprises a manganese-based alloy.
13. The method of claim 12 , wherein the manganese-based alloy is selected from the group of: FeMn, RhMn, PtMn and IrMn.
14. The method of claim 9 , wherein the buffer material comprises a (002) copper.
15. The method of claim 9 , wherein the buffer material comprises a (001) diamond.
16. The method of claim 9 , wherein the buffer material comprises one of: boron doped diamond or nitrogen doped diamond.
17. The method of claim 9 , wherein the step of positioning a layer of ferromagnetic material on a surface of the layer of buffer material, comprises the step of: epitaxially growing the layer of ferromagnetic material on the surface of the layer of buffer material.
18. A perpendicular exchange biased device comprising: a carbon based layer of buffer material on a surface of a substrate, a layer of ferromagnetic material on a surface of the buffer layer, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material; and a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material.
19. A device according to claim 18 , wherein the layer of ferromagnetic material comprises a material selected from the group of: nickel or an alloy containing nickel.
20. A device according to claim 19 , wherein the layer of antiferromagnetic material comprises a manganese-based alloy.
21. A device according to claim 20 , wherein the manganese-based alloy is selected from the group of: FeMn, RhMn, PtMn and IrMn.
22. A device according to claim 18 , wherein the buffer material comprises a (001) diamond.
23. A device according to claim 18 , wherein the buffer material comprises one of: boron doped diamond or nitrogen doped diamond.
24. A method of making a perpendicular exchange biased device comprising: positioning a carbon based layer of buffer material on a surface of a substrate, positioning a layer of ferromagnetic material on a surface of the layer of buffer material, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material; and positioning a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material.
25. The method of claim 24 , wherein the layer of ferromagnetic material comprises a material selected from the group of: nickel or an alloy containing nickel.
26. The method of claim 25 , wherein the layer of antiferromagnetic material comprises a manganese-based alloy.
27. The method of claim 26 , wherein the manganese-based alloy is selected from the group of: FeMn, RhMn, PtMn and IrMn.
28. The method of claim 24 , wherein the buffer material comprises a (001) diamond.
29. The method of claim 24 , wherein the buffer material comprises one of: boron doped diamond or nitrogen doped diamond.
30. The method of claim 24 , wherein the step of positioning a layer of ferromagnetic material on a surface of the layer of buffer material, comprises the step of: epitaxially growing the layer of ferromagnetic material on the surface of the layer of buffer material.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 19, 2002
December 28, 2004
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