Suspended gate single-electron device

1. A single-electron transistor device, comprising: a source and drain supported by a substrate; a quantum island located between said source and drain and that forms tunnel junctions between said source and said drain; and a movable electrode located adjacent said quantum island.

2. The single-electron transistor device as recited in claim 1 , wherein said movable electrode is movable with respect to said quantum island to change a capacitance between said quantum island and said movable electrode when a voltage is applied to said movable electrode.

3. The single-electron transistor device as recited in claim 1 , wherein said moveable electrode is a cantilevered arm member or a supported membrane.

4. The single-electron transistor device as recited in claim 1 , wherein said source and drain and said quantum island are located in substantially a same plane and said moveable electrode is located substantially out of said plane.

5. The single-electron transistor device as recited in claim 1 , wherein said tunnel junctions include a gap between said source and drain and said quantum island, said gap ranging from about 1 nanometer to about 1000 nanometers.

6. The single-electron transistor device as recited in claim 5 , wherein a dielectric material is located within said gap.

7. The single-electron transistor device as recited in claim 1 , wherein said source and drain and said quantum island comprises silicon and said moveable electrode comprises aluminum.

8. The single-electron transistor device as recited in claim 1 , further including a gap that separates said quantum island and said moveable electrode and wherein a displaceable dielectric is located within said gap.

9. The single-electron transistor device as recited in claim 8 , further including a fixed gate located adjacent said quantum island, said fixed gate located to cause a change in a Coulomb blockade energy of said tunnel junctions when a gate voltage is applied to said fixed gate.

10. The single-electron transistor device as recited in claim 1 , further includes a filter configured to allow a drain current having a predefined Coulomb oscillation frequency to pass through said filter.

11. A transistor circuit, comprising: a single-electron device comprising: a source and drain located over a substrate; a quantum island situated between said source and drain and that forms tunnel junctions between said source and said drain; and a movable gate located adjacent said quantum island and that is separated from said quantum island by a gap; and a MOSFET coupled to said single-electron device and configured to amplify a drain current from said single-electron device.

12. The transistor circuit as recited in claim 11 , wherein said movable gate is configured to move with respect to said quantum island to change a capacitance between said quantum island and said movable gate when a voltage is applied to said movable gate.

13. The transistor circuit as recited in claim 12 wherein a displaceable dielectric is located with said gap.

14. The transistor circuit as recited in claim 13 , wherein said transistor circuit when operated at a given voltage is configured to have a first amplitude that causes said drain current to have a first Coulomb oscillation frequency that is between about 0.1 and about 1.0 GHz which corresponds to a first logic state, and further configured to have a second amplitude that causes a second Coulomb oscillation frequency of said drain current that is between about 10 and about 20 GHz corresponds to a second logic state.

15. The transistor circuit as recited in claim 11 , further including a filter coupled to said single-electron device and said MOSFET, said filter configured to allow said drain current to pass through said filter when said drain current has a predefined Coulomb oscillation frequency.