A coolant cooled type semiconductor device capable of achieving a superior heat radiation capability is provided, while having a simple structure. While a plurality of semiconductor modules 1 are arranged in such a manner that main surface directions of these semiconductor modules 1 are positioned in parallel to each other in a interval along a thickness direction thereof. These semiconductor modules 1 are sandwiched by coolant tube 2 having folded portions with fixing members 6, 7, 10. As a consequence, both surfaces of the semiconductor module 1 can be cooled by a single coolant tube with a uniform pinching force.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A cooled type semiconductor switching module comprising: a high-sided semiconductor chip having a high-sided semiconductor switching element; a low-sided semiconductor chip having a low-sided semiconductor switching element, and constituting an inverter circuit with said high-sided semiconductor chip; and a high-sided plate, a middle-sided plate, and a low-sided plate, which are made of metal plates, respectively, wherein: main electrode surfaces of both said semiconductor chips on output sides thereof are separated from each other, and are electrically connected to an inner surface of said middle-sided plate; another surface of said high-sided semiconductor chip is electrically connected to an inner surface of said high-sided plate; another surface of said low-sided semiconductor chip is electrically connected to an inner surface of said low-sided plate; and both said semiconductor chips are covered in an integral form by a sealing resin portion, while exposing outer surfaces of said middle-sided plate, said high-sided plate, and said low-sided plate.
2. A cooled type semiconductor switching module according to claim 1 , wherein: said outer surfaces of said high-sided plate and said low-sided plate are approximately coplanar with each other.
3. A cooled type semiconductor switching module according to claim 1 , wherein: a spacer having a thermally conductive characteristic and an electrically conductive characteristic is interposed between one of said low-sided plate and high-sided plate, and one of said semiconductor chips; another spacer having a thermal conductive characteristic and an electrically conductive characteristic is interposed between said middle-sided plate and another one of said semiconductor chips; and both said spacers own a difference in thickness capable of compensating a difference in thickness existing between both said semiconductor chips.
4. A cooled type semiconductor switching module according to claim 1 , wherein: control electrodes of both said semiconductor chips are formed on the main surfaces of said semiconductor chips, said main surfaces respectively facing said spacers.
5. A cooled type semiconductor switching module according to claim 1 , wherein: the outer main surfaces of said high-sided plate, said low-sided plate, and said middle-sided plate are made in close contact with cooling members through electrically insulating films, respectively; and each of said high-sided plate, said low-sided plate, and said middle-sided plate owns terminal portion projecting from said sealing resin portions along a direction substantially parallel to the outer surfaces.
6. A cooled type semiconductor switching module according to claim 1 , wherein: said spacers own terminal portions projecting from said sealing resin portions along a direction substantially parallel to the outer surfaces.
7. A cooled type semiconductor switching module according to claim 1 , further comprising: main electrode terminals joined to said inner main surfaces of said high-sided plate, said low-sided plate, and said middle-sided plate, said main electrode terminals projecting outside along the outer surfaces.
8. A cooled type semiconductor switching module according to claim 1 , wherein: said semiconductor chip is constituted by both a transistor chip and a flywheel diode chip, which are interposed in a parallel manner between one of said high-sided and low-sided plates and said middle-sided plate, while the transistor chip and the flywheel diode chip are separated from each other.
9. A cooled type semiconductor device according to claim 1 , further comprising: cooling members closely contacting the outer surfaces of said high-sided plate, said low-sided plate, and said middle-sided plate through electric insulating films at sides opposite to said semiconductor chips; wherein said cooling members are pinched along a thickness direction of the semiconductor chips, while said cooling members sandwich said semiconductor chips.
10. A cooled type semiconductor switching module according to claim 4 , further comprising: main electrode terminals formed in said high-sided plate, said low-sided plate, and said middle-sided plate, said main electrode terminals projecting outside along the outer surfaces; control electrode terminals electrically connected to the control electrodes of both said semiconductor chips and projecting outside along the outer surfaces of the plates, said control electrode terminals projecting in a direction opposite to at least one of said main electrode terminals.
11. A cooled type semiconductor switching module according to claim 7 , further comprising: control electrode terminals electrically connected to the control electrodes of both said semiconductor chips, and projecting outside along the outer surfaces of the plates, said control electrode terminals being projected in a direction opposite to at least one of said main electrode terminals.
12. A three-phase semiconductor switching module comprising: three single-phase inverter circuits connected each other in a parallel manner, each of which comprising: a high-sided semiconductor chip having a high-sided semiconductor switching element; a low-sided semiconductor chip having a low-sided semiconductor switching element and being connected with said high-sided semiconductor chip; a high-sided plate, a low-sided plate, and middle-sided plates of a U-phase, a V-phase, and a W-phase, which are made of metal plates respectively; wherein main electrode surfaces of both said semiconductor chips for the U-phase on output sides thereof are electrically connected to an inner-sided main surface of said middle-sided plate for the U-phase, while said main electrode surfaces thereof are separated from each other; main electrode surfaces of both said semiconductor chips for the V-phase on output sides thereof are electrically connected to an inner-sided main surface of said middle-sided plate for the V-phase, while said main electrode surfaces thereof are separated from each other; main electrode surfaces of both said semiconductor chips for the W-phase on output sides thereof are electrically connected to an inner-sided main surface of said middle-sided plate for the W-phase, while said main electrode surfaces thereof are separated from each other; a main electrode surface of said high-sided semiconductor chip for each phase is electrically connected to an inner-sided main surface of said high-sided plate; a main electrode surface of said low-sided semiconductor chip for each phase is connected to an inner-sided main surface of said low-sided plate; and both said semiconductor chips for each phase are covered in an integral form by a sealing resin portion, while exposing outer main surfaces of said middle-sided plate for each phase, said high-sided plate for each phase, and said low-sided plate for each phase.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
December 9, 2002
January 18, 2005
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