Thin film capacitor and method of manufacturing the same

1. A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and first and second conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the first conductor member.

2. The thin film capacitor of claim 1 , wherein a horizontal distance between the end of the base of the dielectric layer opposed to the first conductor member connected to the lower electrode layer and the end of the upper bottom of the dielectric layer is no smaller than 3 micrometers.

3. The thin film capacitor of claim 1 , wherein the dielectric layer is made of a material selected from the group of oxides and compound oxides containing at least one of strontium, barium, lead, zirconium, bismuth, tantalum, titanium, magnesium and niobium.

4. The thin film capacitor of claim 1 , wherein the upper and lower electrode layers are made of a material selected from the group of platinum, gold, copper, palladium, ruthenium and ruthenium oxide, and iridium and iridium oxide.

5. The thin film capacitor of claim 4 , wherein the upper and lower electrode layers are made of the same material.

6. The thin film capacitor of claim 4 , wherein the upper and lower electrode layers are made of different materials.

7. The thin film capacitor of claim 1 , wherein the insulating substrate is a glass substrate, a sapphire substrate, or a silicon substrate having a surface on which an SiO 2 film is formed.