Apparatus and method for exposing a selected feature of an integrated circuit device such as a selected portion of the metallization layer, from the backside of the integrated circuit substrate without disturbing adjacent features of the device such as the active semiconductor regions. This is performed using an FIB (focused ion beam) etching process in conjunction with observation by an optical microscope to form a trench through the substrate. The floor of the trench is formed so as to be as smooth and planar as possible, thereby preventing undesirable exposure of the underlying active regions through any unknown or undesired cavity caused by scratches or pits or a deeper than desired sidewall. The smoothness and planarity of the floor of the trench is established by, prior to forming the trench, removing any surface defect initially present by using an FIB etching without use of assist gas to eliminate most scratches or impurities on the surface of the silicon, followed by removal of implanted ions using a gas-injected assisted FIB etch. Then the actual trench is formed using an assisted etch using a more aggressive injected gas.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of forming a cavity having a cavity depth in a crystalline substrate, comprising the steps of: a) applying a charged particle beam to a surface of the substrate without an injected gas into the beam, for a time sufficient to remove defects from the surface of the substrate; b) subsequent to step a), applying to the surface of the substrate a charged particle beam with a first gas injected therein, for a time sufficient to remove a surface layer of said substrate having ions implanted therein by the charged particle beam, said surface layer having a thickness; and c) subsequent to step b), applying to the surface of the substrate a charged particle beam with a second gas injected therein, for a time sufficient to define the cavity having said cavity depth; said cavity depth being much larger than said surface layer thickness.
2. The method of claim 1 , wherein said crystalline substrate is a semiconductor substrate.
3. The method of claim 2 , wherein said semiconductor substrate is silicon.
4. The method of claim 3 , wherein the first gas is a halogen or halide.
5. The method of claim 3 , wherein the first gas is ethylene-di-iodide.
6. The method of claim 3 , wherein the second gas is a halide.
7. The method of claim 6 , wherein the halide is XeF2.
8. The method of claim 7 , wherein each charged particle beam is a focused gallium ion beam; said focused gallium ion beam operates at a beam current in the range between 12 and 15 nanoamps; said focused gallium beam operates at a beam energy of 30 keV; the first gas is ethylene-di-iodide having a flow rate sufficient to sustain a chamber pressure of approximately 2×10−5 Torr.
9. The method of claim 3 , wherein each charged particle beam is a focused gallium ion beam.
10. The method of claim 3 , wherein the step a) is for a duration of 2 to 4 minutes.
11. The method of claim 3 , wherein steps a), b), and c) include maintaining an approximately constant distance between a source of the beam and a working face of the substrate.
12. The method of claim 3 , further comprising optically observing steps a), b), and c).
13. The method of claim 3 , wherein the substrate initially has on its surface an antireflective coating that is at least partly removed before step (a).
14. The method of claim 13 , wherein the at least partly removing of said anti-reflective coating is done by applying a charged particle beam to a surface of the substrate without an injected gas into the beam.
15. The method of claim 3 , wherein the substrate includes a plurality of semiconductor regions extending into the substrate from a principal surface of the substrate, and steps a), b), and c) are carried out from an obverse surface of the substrate.
16. A method of preparing a surface of a crystalline substrate, comprising the steps of: a) applying a charged particle beam to the substrate without an injected gas into the beam, for a time sufficient to remove defects from the surface; b) subsequent to step a), applying to the surface of the substrate a charged particle beam with a first gas injected therein, for a time sufficient to remove a surface layer of said substrate having ions implanted therein by the charged particle beam, said surface layer having a thickness; and c) observing the surface with an optical instrument arranged coaxial with the charged particle beam.
17. The method of claim 16 , wherein said crystalline substrate is a semiconductor substrate.
18. The method of claim 17 , wherein said semiconductor substrate is silicon.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
May 30, 2002
February 15, 2005
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