There are provided the steps of forming a first insulating film over a semiconductor substrate, forming a capacitor having a lower electrode, a ferroelectric layer, and an upper electrode over the first insulating film, and growing a second insulating film over the first insulating film and the capacitor by using a mixed gas containing a compound gas of oxygen and nitrogen, TEOS, and oxygen. Accordingly, characteristics of the capacitor can be improved irrespective of the capacitor forming position on the insulating layer.
Legal claims defining the scope of protection, as filed with the USPTO.
1. A method of manufacturing a semiconductor device, comprising the steps of: forming a first insulating film over a semiconductor substrate; forming a capacitor having a lower electrode, a ferroelectric layer, and an upper electrode over the first insulating film; and growing a second insulating film over the first insulating film and the capacitor by using a mixed gas containing a compound gas of oxygen and nitrogen, TEOS, and oxygen.
2. A method of manufacturing a semiconductor device, according to claim 1 , wherein the compound gas of oxygen and nitrogen is a gas that contains at least one of N 2 O, NO 2 , and NO.
3. A method of manufacturing a semiconductor device, according to claim 1 , wherein a ratio of an flow rate of the compound gas to a total flow rate of the mixed gas is set within a range of 20 to 35%.
4. A method of manufacturing a semiconductor device, according to claim 1 , wherein a flow rate of the oxygen gas is two times or more a flow rate of the TEOS gas.
5. A method of manufacturing a semiconductor device, according to claim 1 , wherein the second insulating film is a silicon oxide film.
6. A method of manufacturing a semiconductor device, according to claim 1 , wherein nitrogen is contained in the second insulating film.
7. A method of manufacturing a semiconductor device, according to claim 1 , wherein an inert gas is contained in the mixed gas.
8. A method of manufacturing a semiconductor device, according to claim 7 , wherein the inert gas is a carrier gas of the TEOS.
9. A method of manufacturing a semiconductor device, according to claim 1 , wherein the second insulating film is formed by one of a plasma CVD method, a high-density plasma CVD method, or a hot-filament CVD method.
10. A method of manufacturing a semiconductor device, according to claim 1 , wherein the second insulating film has a compressive stress of 1.5×10 9 dyne/cm 2 to 5.0×10 8 dyne/cm 2 .
11. A method of manufacturing a semiconductor device, according to claim 1 , wherein various processes applied after the second insulating film is formed are carried out at a substrate temperature of 600° C. or less.
12. A method of manufacturing a semiconductor device, according to claim 1 , wherein the lower electrode of the capacitor is formed of a noble metal layer.
13. A method of manufacturing a semiconductor device, according to claim 1 , wherein the capacitor is formed in plural at an interval on the first insulating film, and respective lower electrodes constituting a plurality of capacitors are connected mutually.
14. A method of manufacturing a semiconductor device, according to claim 1 , wherein an extended portion that is not covered with the ferroelectric layer is provided to an end of the lower electrode.
15. A method of manufacturing a semiconductor device, according to claim 1 , further comprising the step of forming a capacitor-protection insulating film between the capacitor and the second insulating film.
16. A method of manufacturing a semiconductor device, according to claim 15 , wherein the capacitor-protection insulating film is formed of one of aluminum oxide, PZT material, and titanium oxide.
17. A method of manufacturing a semiconductor device, according to claim 15 , wherein the capacitor-protection insulating film is formed on the capacitor in plural times.
18. A method of manufacturing a semiconductor device, according to claim 17 , wherein the capacitor-protection insulating film is formed of one of aluminum oxide, PZT material, and titanium oxide.
19. A method of manufacturing a semiconductor device, according to claim 1 , further comprising the steps of: forming a first hole on a contact region of the lower electrode, which does not overlap with the upper electrode and the ferroelectric layer, by patterning the second insulating layer; forming a second hole over the upper electrode by patterning the second insulating layer; and forming a first wiring, which is connected electrically to the lower electrode via the first hole, and a second wiring, which is connected electrically to the upper electrode via the second hole, over the second insulating layer respectively.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 17, 2003
March 29, 2005
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